2SA1020-Y

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

PowerAmplifierApplications PowerSwitchingApplications ?LowCollectorsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Highcollectorpowerdissipation:PC=900mW ?High-speedswitching:tstg=1.0μs(typ.) ?Complementaryto2SC2655

2SA1020-Y-AB3-B

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-AB3-K

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-AB3-R

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-T9N-B

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-T9N-K

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-T9N-R

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y(F,M)

包裝：散裝 封裝/外殼：TO-226-3，TO-92-3 長體 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SA1020-Y(HIT,F,M)

包裝：散裝 封裝/外殼：TO-226-3，TO-92-3 長體 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SA1020-Y(ND1,AF)

包裝：散裝 封裝/外殼：TO-226-3，TO-92-3 長體 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage

ST-2SA1020

PNPSiliconEpitaxialTransistor

PNPSiliconEpitaxialTransistor Poweramplifierapplication Powerswitchingapplication

UTC2SA1020

PNPEPITAXIALSILICONTRANSISTOR

DESCRIPTION TheUTC2SA1020isdesignedforpoweramplifierandpowerswitchingapplications. FEATURES *Lowcollectorsaturationvoltage:VCE(SAT)=-0.5V(MAX)(IC=-1A) *Highspeedswitchingtime:tSTG=1.0μs(TYP) *ComplementtoUTC2SC2655