首頁 >2SA1162-Y,LF>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SA1162-Y,LF | 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-236-3，SC-59，SOT-23-3 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 0.15A SMINI | Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highvoltageandcurrent,excellenthFElinearity,highhFE,lownoise,complementaryto2SC2712. Applications Audiofrequencygeneralpurposeamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
Plastic-EncapsulateTransistors FEATURES Lownoise:NF=1dB(Typ.),10dB(Max.) Complementaryto2SC2712. SmallPackage. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | HOTTECH | ||
PNPEPITAXIALSILICONTRANSISTOR PNPEPITAXIALSILICONTRANSISTOR LOWFREQRENCY,LOWNOISEAMPLIFIER ?Complemento2SC2712 ?Collector-current:Ic=-100mA Collector-EmillerVoltage:VCE=-45V | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司 | WINNERJOIN | ||
PNPGeneralPurposeTransistor FEATURES PNPGeneralPurposeTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壯桂微電子有限責任公司(簡稱‘桂微’) | GSME | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Lownoise ●Complementaryto2SC2712 ●SmallPackage | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 世紀微電子常州銀河世紀微電子股份有限公司 | BILIN | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Plastic-EncapsulateTransistors FEATURES .Lownoise .Complementaryto2SC2712 .SmallPackage | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
SiliconPNPEpitaxialTypeTransistor ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
TRANSISTOR(PNP) FEATURES .Lownoise:NF=1dB(Typ.),10dB(Max.) .Complementaryto2SC2712. .SmallPackage. MARKING:SO,SY,SG | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽半導體深圳市金譽半導體股份有限公司 | HTSEMI | ||
PNPSiliconGeneralPurposeTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
PNPSiliconGeneralPurposeTransistor FEATURES ?LowNoise:NF=1dB(Typ.),10dB(Max.) ?Complementsofthe2SC2712 MECHANICALDATA ?Case:SOT-23,MoldedPlastic ?Weight:0.008grams(approx.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:150mW(Tamb=25℃) Collectorcurrent ICM:150mA Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Lownoise:NF=1dB(Typ),10dB(Max). ●Commplementaryto2SC2712. ●Smallpackage. APPLICATIONS ●Generalpurposeapplication. | BILINGalaxy Semi-Conductor Holdings Limited 世紀微電子常州銀河世紀微電子股份有限公司 | BILIN | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
NewJerseySemi-ConductorProducts, NewJerseySemi-ConductorProducts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號：
2SA1162-Y,LF
- 制造商：
Toshiba Semiconductor and Storage
- 類別：
分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個
- 包裝：
卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶
- 晶體管類型：
PNP
- 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：
300mV @ 10mA，100mA
- 電流 - 集電極截止（最大值）：
100μA（ICBO）
- 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：
120 @ 2mA，6V
- 頻率 - 躍遷：
80MHz
- 工作溫度：
125°C（TJ）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
TO-236-3，SC-59，SOT-23-3
- 供應(yīng)商器件封裝：
S-Mini
- 描述：
TRANS PNP 50V 0.15A SMINI
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TOSHIBA(東芝) |
2112+ |
SOT-23(SOT-23-3) |
105000 |
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
TOSHIBA/東芝 |
22+ |
SOT-23(SOT-23-3) |
258500 |
優(yōu)勢價格原裝現(xiàn)貨提供BOM一站式配單服務(wù) |
詢價 | ||
TOSHIBA/東芝 |
23+ |
SOT23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TOSHIBA/東芝 |
2020+ |
SOT-23(SOT-23-3) |
7600 |
詢價 | |||
TOSHIBA/東芝 |
2023+ |
SOT-23(SOT-23-3) |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
TOSHIBA/東芝 |
2022+ |
SOT-23(SOT-23-3) |
7600 |
原廠原裝,假一罰十 |
詢價 | ||
TOSHIBA/東芝 |
2022 |
SOT23 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
TOSHIBA/東芝 |
21+ |
SOT-23(SOT-23-3) |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
TOSHIBA/東芝 |
SOT-23(SOT-23-3) |
6000 |
只做原裝正品,賣元器件不賺錢交個朋友 |
詢價 | |||
TOSHIBA/東芝 |
23+ |
SOT-23(SOT-23-3) |
8080 |
原裝正品，支持實單 |
詢價 |
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