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2SA1240

DIFFERENTIAL AMP APPLICATIONS

DifferentialAmpApplications

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

2SA1241

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications ?LowCollectorsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Excellentswitchingtime:tstg=1.0μs(typ.) ?Complementaryto2SC3076

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1241

Power Amplifier Applications

PowerAmplifierApplications PowerSwitchingApplications ?LowCollectorsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Excellentswitchingtime:tstg=1.0μs(typ.) ?Complementaryto2SC3076

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1241

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

PowerAmplifierApplications PowerSwitchingApplications ?LowCollectorsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Excellentswitchingtime:tstg=1.0μs(typ.) ?Complementaryto2SC3076

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1241

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1241

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Hightransitionfrequency ·Complementaryto2SC3076 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SA1241

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Hightransitionfrequency ·Complementaryto2SC3076 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SA1241-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Hightransitionfrequency ·Complementaryto2SC3076 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SA1241-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Hightransitionfrequency ·Complementaryto2SC3076 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SA1241-O

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

PowerAmplifierApplications PowerSwitchingApplications ?LowCollectorsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Excellentswitchingtime:tstg=1.0μs(typ.) ?Complementaryto2SC3076

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1241-Y

Power Amplifier Applications

PowerAmplifierApplications PowerSwitchingApplications ?LowCollectorsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Excellentswitchingtime:tstg=1.0μs(typ.) ?Complementaryto2SC3076

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1242

TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications ?ExcellenthFElinearity :hFE(1)=100to320(VCE=?2V,IC=?0.5A) :hFE(2)=70(min)(VCE=?2V,IC=?4A) ?Lowcollectorsaturationvoltage :VCE(sat)=?1.0V(max)(IC=?4A,IB=?0.1A) ?Highpow

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1242

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features ExcellenthFElinearity,lowVCE(sat),highPC. Applications Strobeflashapplications,mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SA1242

Silicon PNP Epitaxial Type

FEATURES ●ExcellenthFElinearity. ●Lowcollectorsaturationvoltage. ●Highpowerdissipation. APPLICATIONS ●StrobeFlashApplications. ●MediumPowerAmplifierApplications.

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

2SA1242

isc Silicon PNP Power Transistor

DESCRIPTION ?hFE=100-320(IC=-0.5A;VCE=-2V) ?hFE=70(Min)(IC=-4A;VCE=-2V) ?LowCollector-EmitterSaturationVoltage-:VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ?·HighPowerDissipation-:PC=10W@TC=25℃,PC=10W@Ta=25℃ ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceand

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SA1242

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●StrobeFlashApplicationsMediumPowerAmplifierApplications ●ExcellenthFELinearity :hFE(1)=100to320(VCE=?2V,IC=?0.5A) :hFE(2)=70(min)(VCE=?2V,IC=?4A) ●LowCollectorSaturationVoltage :VCE(sat)=?1.0V(max)(IC=?

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SA1242

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1242

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SA1242

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SA1242-251

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

晶體管資料

  • 型號(hào):

    2SA1240

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    差分放大器射極輸出 (Dual)

  • 封裝形式:

    特殊封裝

  • 極限工作電壓:

    130V

  • 最大電流允許值:

    0.05A

  • 最大工作頻率:

    160MHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

  • 最大耗散功率:

    0.5W

  • 放大倍數(shù):

  • 圖片代號(hào):

    NO

  • vtest:

    130

  • htest:

    160000000

  • atest:

    0.05

  • wtest:

    0.5

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SANYO
23+
2800
正品原裝貨價(jià)格低qq:2987726803
詢價(jià)
SANYO
24+
SOT-89-6
6300
新進(jìn)庫(kù)存/原裝
詢價(jià)
SANYO/三洋
2022+
3200
全新原裝 貨期兩周
詢價(jià)
SANYO
1922+
SOT89-5
35689
原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨
詢價(jià)
SANYO
6PIN
8560
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)
NULL
23+
TO-252
6000
專業(yè)優(yōu)勢(shì)供應(yīng)
詢價(jià)
東芝
24+
TO-251
5000
只做原裝公司現(xiàn)貨
詢價(jià)
東芝
19+
TO-251252
59110
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
TOS
22+23+
TO252
73787
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
TOSHIBA
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
更多2SA124供應(yīng)商 更新時(shí)間2024-10-28 10:33:00