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2SA1615

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES ?Largecurrentcapacity: IC

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SA1615

P TYPE TTANSISTORS

PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand

STANSON

Stanson Technology

2SA1615

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●LargeCurrentCapacity ●HighhFEandLowCollectorSaturationVoltage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SA1615

PNP Silicon Epitaxial Transistor for High-speed Switching

FEATURES ●Largecurrentcapacity: IC(DC):-10A,IC(pulse):-15A. ●HighhFEandlowcollectorsaturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

2SA1615

isc Silicon PNP Power Transistor

DESCRIPTION ?Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A ?HighhFEandlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APP

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1615

SILICON POWER TRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING DESCRIPTION The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandare idealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES ?Largecurrent

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SA1615

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1615

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1615-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1615-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1615-Z

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES ?Largecurrentcapacity: IC

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SA1615-Z

P TYPE TTANSISTORS

PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand

STANSON

Stanson Technology

2SA1615-Z

Silicon Power Transistors

Features ●Largecurrentcapacity. ●HighhFEandlowcollectorsaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SA1615-Z

isc Silicon PNP Power Transistor

DESCRIPTION ?Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A ?HighhFEandlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APP

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SA1615_15

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

晶體管資料

  • 型號：

    2SA1615

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產廠家：

  • 制作材料：

    Si-PNP

  • 性質：

    高速開關 （SS）_功率放大 （L）

  • 封裝形式：

  • 極限工作電壓：

    30V

  • 最大電流允許值：

    10A

  • 最大工作頻率：

    180MHZ

  • 引腳數：

  • 可代換的型號：

    2SB936,

  • 最大耗散功率：

    15W

  • 放大倍數：

  • 圖片代號：

    NO

  • vtest：

    30

  • htest：

    180000000

  • atest：

    10

  • wtest：

    15

詳細參數

  • 型號：

    2SA1615

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
23+
TO-252
360000
專業(yè)供應MOS/LDO/晶體管/有大量價格低
 詢價
RENESAS
TO252
30000000
原裝進口中國百強元器件分銷企業(yè) 專注RENESAS十年 公司大量RENESAS現貨 歡迎您的咨詢 百年不變 服務至上
 詢價
NEC
24+
TO-252
86200
新進庫存/原裝
 詢價
NEC
12+
TO-251
15000
全新原裝,絕對正品,公司現貨供應。
 詢價
NEC
16+
原廠封裝
3500
原裝現貨假一罰十
 詢價
NEC
23+
TO-252
35890
詢價
NEC
2339+
4231
公司原廠原裝現貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
23+
TO-252
20000
原裝正品,假一罰十
 詢價
NEC
2016+
TO-251
4000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
NEC
24+
SOT252
2987
只售原裝自家現貨!誠信經營!歡迎來電
 詢價
更多2SA1615供應商 更新時間2025-1-6 10:37:00

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