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2SA1962OTU

PNP Epitaxial Silicon Transistor

Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2SA1962OTU

PNP Epitaxial Silicon Transistor

Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA1962OTU

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-3P-3，SC-65-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS PNP 250V 17A TO3P

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA1962

PowerAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1962

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-3P(I)package ?Complementtotype2SC5242 ?Highcollectorvoltage:VCEO=-230V(Min) APPLICATIONS ?Poweramplifierapplications ?Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2SA1962

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-3P(I)package ?Complementtotype2SC5242 ?Highcollectorvoltage:VCEO=-230V(Min) APPLICATIONS ?Poweramplifierapplications ?Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

2SA1962

iscSiliconPNPPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) ?GoodLinearityofhFE ?ComplementtoType2SC5242 APPLICATIONS ?Poweramplifierapplications ?Recommendfor80Whighfidelityaudiofrequency amplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SA1962

PNPEpitaxialSiliconTransistor

Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2SA1962

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications ?Highbreakdownvoltage:VCEO=?230V(min) ?Complementaryto2SC5242 ?Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1962

SiliconPNPPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) ?GoodLinearityofhFE ?ComplementtoType2SC5242 APPLICATIONS ?Poweramplifierapplications ?Recommendfor80Whighfidelityaudiofrequency amplifieroutputstageapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2SA1962

SiliconPNPPowerTransistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2SA1962

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1962

PowerAmplifierApplications

PowerAmplifierApplications ?Highbreakdownvoltage:VCEO=?230V(min) ?Complementaryto2SC5242 ?Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1962

PNPEpitaxialSiliconTransistor

Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA1962-O

PowerAmplifierApplications

PowerAmplifierApplications ?Highbreakdownvoltage:VCEO=?230V(min) ?Complementaryto2SC5242 ?Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1962RTU

PNPEpitaxialSiliconTransistor

Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA1962RTU

PNPEpitaxialSiliconTransistor

Features ?HighCurrentCapability:IC=-17A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=-250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SC5242/FJA4313. ?ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    2SA1962OTU

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個(gè)

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 晶體管類型：

    PNP

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降（最大值）：

    3V @ 800mA，8A

  • 電流 - 集電極截止（最大值）：

    5μA（ICBO）

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)（最小值）：

    80 @ 1A，5V

  • 頻率 - 躍遷：

    30MHz

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-3P-3，SC-65-3

  • 供應(yīng)商器件封裝：

    TO-3P

  • 描述：

    TRANS PNP 250V 17A TO3P

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
onsemi(安森美)
23+
TO-3P
1224
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價(jià)
onsemi
24+
TO-3P-3,SC-65-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ON/安森美
2023+
SMD
15000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
Fairchild
24+
TO-3P
128
詢價(jià)
Fairchild
23+
TO-3PF
7750
全新原裝優(yōu)勢
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
ON/安森美
24+
SMD
450
原裝現(xiàn)貨
 詢價(jià)
ON/安森美
24+
TO-3P-3
25500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售
 詢價(jià)
ON/安森美
21+
SMD
30000
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅
 詢價(jià)
更多2SA1962OTU供應(yīng)商 更新時(shí)間2025-1-12 23:00:00

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