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2SB1412

HIGHVOLTAGESWITCHINGTRANSISTOR

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

2SB1412

iscSiliconNPNPowerTransistor

DESCRIPTION ?Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Poweramplifie

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1412

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES PowerAmplifierApplications

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SB1412

Lowfrequencytransistor(−20V,−5A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SB1412

Lowfrequencytransistor(−20V,−5A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SB1412

PNPSiliconLowFrequencyTransistor

Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SB1412

LowFrequencyTransistor

Features ●LowVCE(sat). ●PNPsilicontransistor.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SB1412

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412

PNPEPITAXIALPLANARTRANSISTOR

Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat)

WEITRON

Weitron Technology

2SB1412

LowFrequencyTransistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SB1412

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1412

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1412-P

PNPSiliconEpitaxialTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2SB1412-Q

PNPSiliconEpitaxialTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2SB1412-R

PNPSiliconEpitaxialTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2SB1412TLR

Lowfrequencytransistor(??0V,??A)

Littelfuselittelfuse

力特力特公司

詳細參數(shù)

  • 型號：

    2SB1412TRR

  • 功能描述：

    兩極晶體管 - BJT PNP LOW VCE

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
ROHM
22+
SOT-252
3200
詢價
松下
24+
TO-126L
5000
詢價
NULL
23+
TO-252
6000
專業(yè)優(yōu)勢供應(yīng)
 詢價
Panasonic
2023+環(huán)?，F(xiàn)貨
TO262SF
10
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
PANASONIC
23+
MT-3-AT1
4000
正品原裝貨價格低qq:2987726803
 詢價
ROHM
2016+
TO252
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
ROHM
21+
TO252
1100
原裝現(xiàn)貨假一賠十
 詢價
ROHM/羅姆
23+
TO252
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
ROHM
23+
TO252
1100
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
PANASONIC/松下
22+
MT-3-AT1
20000
保證原裝正品,假一陪十
 詢價
更多2SB1412TRR供應(yīng)商 更新時間2024-11-15 17:29:00

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