2SB1657中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

AUDIO FREQUENCY AMPLIFIER, SWITCHING

PNP SILICON EPITAXIAL TRANSISTORS

FEATURES

· Low VCE(sat)

VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA)

· High DC Current Gain

hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A)

ABSOLUTE MAXIMUM RATINGS

Maximum Voltage and Current (TA = 25 °C)

Collector to Base Voltage VCB0 -30 V

Collector to Emitter Volteage VCE0 -30 V

Emitter to Base Voltage VEB0 -6.0 V

Collector Current (DC) IC(DC) -5.0 A

Collector Current (Pulse)* IC(Pulse) -8.0 A

Base Current (DC) IB(DC) -1.0 A

* PW ￡ 10ms, Duty Cycle ￡ 10

Maximum Power Dissipation

Total Power Dissipation (TC = 25 °C) PT 10 W

Total Power Dissipation (TA = 25 °C) PT 1.0 W

Maximum Temperature

Junction Temperature Tj 150 °C

Storage Temperature Tstg -55 to 150 °C