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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
2SB166040ML	文件：18.02 Kbytes Page：1 Pages	SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ?2SB166040MLisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ?Lowpowerlosses,highefficiency; ?Guardringconstructionfortransientprotection; ?HighESDcapability; ?Highsurgecapability; ?Packagedproductsarewidelyuse	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
2SB166100MA	文件：20.7 Kbytes Page：1 Pages	LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ?2SB166100MAisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ?Duetospecialschottkybarrierstructure,thechips haveverylowreverseleakagecurrent(typical IR=0.002mA@Vr=100V)andmaximum150°C opera	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
2SB1664	文件：43.19 Kbytes Page：4 Pages	PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications PNPEpitaxialPlanarSiliconDarlingtonTransistor Features ?HighDCcurrentgain. ?LargecurrentcapacityandwideASO. ?Lowsaturationvoltage. Applications ?Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.	SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社	SANYO
2SB1667	文件：123.78 Kbytes Page：3 Pages	TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) AudioFrequencyPowerAmplifierApplications ?Lowsaturationvoltage:VCE(sat)=?1.7V(max) (IC=?3A,IB=?0.3A)	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
2SB1667	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
2SB1667	文件：45.16 Kbytes Page：2 Pages	Silicon PNP Triple Diffused Type ■Features ●Lowsaturationvoltage ●AudioFrequencyPowerAmplifierApplications	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司	KEXIN
2SB1668	文件：53.81 Kbytes Page：2 Pages	For Power amplification (-100V, -8A) ForPoweramplification(?100V,?8A) Features 1)HighhFEbydarlingtonconnection. 2)Built-inresistorsbetweenbaseandemitter. 3)Damperdiodeisincorporated. Applications Relaydrive Motordrive	ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán)	ROHM
2SB1668	文件：53.54 Kbytes Page：1 Pages	For Power amplification (100V, 8A) PowerTransistor(100V,8A) Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1668.	ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán)	ROHM
2SB1668	文件：91.07 Kbytes Page：1 Pages	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)	ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán)	ROHM
2SB1669	文件：138.29 Kbytes Page：6 Pages	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES ?HighDCcurrentamplifierratehFE≥100(VCE=?5.0	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
2SB1669	文件：353.68 Kbytes Page：2 Pages	isc Silicon PNP Power Transistor DESCRIPTION ?HighDCcurrentamplifierrate hFE≥100@VCE=-5V,IC=-0.5A ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?The2SB1669-Zisapowertransistorthatcanbedirectlydriven fromtheoutputofanIC.Thistransistorisidea	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
2SB1669	文件：261.37 Kbytes Page：8 Pages	SILICON POWER TRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=?	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SB1669-S	文件：138.29 Kbytes Page：6 Pages	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES ?HighDCcurrentamplifierratehFE≥100(VCE=?5.0	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
2SB1669-S	文件：261.37 Kbytes Page：8 Pages	SILICON POWER TRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=?	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SB1669-Z	文件：138.29 Kbytes Page：6 Pages	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES ?HighDCcurrentamplifierratehFE≥100(VCE=?5.0	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
2SB1669-Z	文件：239.17 Kbytes Page：2 Pages	isc Silicon NPN Power Transistor DESCRIPTION ?HighDCcurrentamplifierratehFE≥100@VCE=-5V,IC=-0.5A ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?The2SB1669-ZisapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.Thistransi	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
2SB1669-Z	文件：261.37 Kbytes Page：8 Pages	SILICON POWER TRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=?	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SB1667	文件：178.29 Kbytes Page：5 Pages	Audio Frequency Power Amplifier Applications	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
2SB1667	文件：161.88 Kbytes Page：5 Pages	Silicon PNP Triple Diffused Type	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
2SB1667_06	文件：161.88 Kbytes Page：5 Pages	Silicon PNP Triple Diffused Type	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市卓越微芯電子有限公司	2SB166100MA	SILAN	2020+	CDIP	4100	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
瀚佳科技(深圳)有限公司	2SB166100MA	SILAN/士蘭微	21+		65230		詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	2SB1661-AZ	RENESAS/瑞薩	23+	252-251	988888	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫(kù)存,詳	詢價(jià)
深圳市萊克訊科技有限公司	2SB1661S	HITACHI	1922+	SOT-252	35689	原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨	詢價(jià)
深圳市一線半導(dǎo)體有限公司	2SB1661STL	RENESAS瑞薩/HITACHI日立	24+	TO-252	9200	新進(jìn)庫(kù)存/原裝	詢價(jià)
深圳市鵬和科技有限公司	2SB1661STL	ROHM	24+	SOT-252	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	2SB1661STL	ROHM	21+	SOT-252	3000	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	2SB1661STL	ROHM/羅姆	23+	SOT-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳廊盛科技有限公司	2SB1661STL	ROHM/羅姆	2022	SOT-252	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市匯萊威科技有限公司	2SB1661STL		ROHM	SOT-252	608900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)

更多2SB166供應(yīng)商更新時(shí)間2024-12-23 14:08:00

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