2SB229100MA中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

? 2SB229100MA is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

? Due to special schottky barrier structure, the chips

have very low reverse leakage current ( typical

IR=0.002mA@ Vr=100V ) and maximum 150°C

operation junction temperature;

? Low power losses, high efficiency;

? Guard ring construction for transient protection;

? High ESD capability;

? High surge capability;

? Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

? Chip Size: 2290μm X 2290μm;

? Chip Thickness: 280±20μm;

? Have two top side electrode materials for customer

to choose, detail refer to ordering specifications.