首頁 >2SC1623-GTF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SOT-323Plastic-EncapsulateTransistors FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
NPNTransistors Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | ||
SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
NPNPlastic-EncapsulateTransistors | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒濟南晶恒電子有限責(zé)任公司 | JINGHENG | ||
SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier. | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司 | WINNERJOIN | ||
HighDCcurrentgainhFE200(Typ)VCE6V,IC1mA FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半導(dǎo)體美科半導(dǎo)體股份(香港)有限公司 | MAKOSEMI | ||
Plastic-EncapsulateTransistors FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | HOTTECH | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V | HDSEMIJiangsu High diode Semiconductor Co., Ltd 蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司 | HDSEMI | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ●HighVoltage:VCEO=50V. APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor. ●Audiofrequencygeneralpurposeamplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONTRANSISTORMINIMOLD DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
SiliconPNPEpitaxialTypeTransistor | BWTECH Bruckewell Technology LTD | BWTECH | ||
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812. Applications Audiofrequencygeneralamplifierapplication. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
Plastic-EncapsulateTransistors | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三聯(lián)盛科技股份深圳市三聯(lián)盛科技股份有限公司 | SHENZHENSLS | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforaudiofrequencyamplifierapplications. | DCCOM Dc Components | DCCOM | ||
NPNEpitaxialPlanarTransistor DESCRIPTION The2SC1623isdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
NPNSiliconTransistor Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
SOT23-3 |
2600 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
杰翔達 |
23+ |
17ROHS |
6000 |
BOM配單--可開發(fā)票專業(yè)手機料也回收 |
詢價 | ||
三棱 |
16+ |
SC59 |
27000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
TOS |
24+ |
SMD |
6000 |
詢價 | |||
NEC |
23+ |
SOT-23 |
12000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | ||
TOSHIBA/東芝 |
22+ |
SMD |
50000 |
原裝正品.假一罰十 |
詢價 | ||
NEC |
22+ |
SOT23 |
12000 |
只做原裝、原廠優(yōu)勢渠道、假一賠十 |
詢價 | ||
NEC |
24+ |
SOT23 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
SOT-23 |
8293 |
詢價 | |||
NEC |
22+ |
TSOP |
2500 |
強調(diào)現(xiàn)貨,隨時查詢 |
詢價 |
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