2SC2655-O

NPN Plastic-Encapsulate Transistor

Features ?Collectorof0.9WattsofPowerDissipation. ?Collector-current2.0A ?Operatingandstoragejunctiontemperaturerange:-55
to+150
?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS

2SC2655-O-T9N-B

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655-O-T9N-K

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655-O-T9N-R

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655-O(ND2,AF)

Package：TO-226-3，TO-92-3 長體；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SC2655-O(TE6,F,M)

Package：TO-226-3，TO-92-3 長體；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SC2655-O,F(J

Package：TO-226-3，TO-92-3 長體；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SC2655

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC2655

SiliconNPNtransistorinaTO-92LMPlasticPackage

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,complementaryto2SA1020. Applications Poweramplifierandswitchingapplications.

2SC2655

TRANSISTOR(NPN)

FEATURES ●Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) ●Highspeedswitchingtime:tstg=1μs(Typ.) ●Complementaryto2SA1020