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2SC2655

TO-92MODPlastic-EncapsulateTransistors

FEATURES LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) HighSpeedSwitchingTime:tstg=1μs(Typ.) Complementaryto2SA1020

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SC2655

COLOURTELEVISIONC9PJChassis

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC2655

COLORTELEVISION

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC2655

COLORTELEVISIONN1PSChassis

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC2655

PowerAmplifierApplicationsPowerSwitchingApplications

PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) ?Highcollectorpowerdissipation:PC=900mW ?High-speedswitching:tstg=1.0μs(typ.) ?Complementaryto2SA1020.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC2655

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

2SC2655

SiliconNPNtransistorinaTO-92LMPlasticPackage

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,complementaryto2SA1020. Applications Poweramplifierandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

2SC2655

TRANSISTOR(NPN)

FEATURES ●Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) ●Highspeedswitchingtime:tstg=1μs(Typ.) ●Complementaryto2SA1020

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

2SC2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC2655

iscSiliconNPNPowTransistor

DESCRIPTION ?SiliconNPNepitaxialtype ?Lowsaturationvoltage ?Complementaryto2SA1020 ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Poweramplifierapplications ?Powerswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC2655

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) ●HighSpeedSwitchingTime:tstg=1μs(Typ.) ●Complementaryto2SA1020

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SC2655

NPNPlasticEncapsulatedTransistor

FEATURES -Lowsaturationvoltage：VCE(sat)=0.5V(Max)(IC=1A) -Highspeedswitchingtime：tstg=1μs(Typ.) -Complementaryto2SA1020

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC2655

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

2SC2655

SiliconNPNEpitaxialType(PCTProcess)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC2655

TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) ?Highcollectorpowerdissipation:PC=900mW ?High-speedswitching:tstg=1.0μs(typ.) ?Complementaryto2SA1020.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC2655L

NPNPlasticEncapsulatedTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC2655L-O

NPNPlasticEncapsulatedTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC2655L-O

NPNPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

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