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零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NPNTransistors Features Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
Itisanultra-high-frequencylow-noisetransistor,usingplanarNPNsiliconoutside Description 2SC3356isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside. Extendedbipolarprocess.Ithashighpowergain,lownoisefigure,largedynamicrangeandidealcurrentcharacteristics. Use SOT-23/SC-59SMDpackage,mainlyusedinVHF,UHFandCATVhi | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
NPNPlastic-EncapsulateTransistors | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒濟(jì)南晶恒電子有限責(zé)任公司 | JINGHENG | ||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lownoiseandhighpowergain. Applications lownoiseamplifieratVHF,UHFandCATVbandapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
LowNoiseandHighGain DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES ?LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0 | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN | ||
NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold FEATURES ?Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz ?Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA, | CEL California Eastern Labs | CEL | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半導(dǎo)體美科半導(dǎo)體股份(香港)有限公司 | MAKOSEMI | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
HIGHFREQUENCYLOWNOISEAMPLIFIER | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
原廠封裝 |
19230 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
2SC3356-T |
8460 |
8460 |
詢價(jià) | ||||
NEC |
23+ |
SOT-23 |
50000 |
原裝正品 支持實(shí)單 |
詢價(jià) | ||
NEC |
24+ |
SOT-23 |
2300 |
詢價(jià) | |||
NEC |
24+ |
SOT-23 |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢 |
詢價(jià) | ||
NEC |
21+ |
3000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | |||
NEC |
SOT-23 |
608900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
NEC |
22+ |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) | |||
NEC |
3000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||||
UTC/友順 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) |
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