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2SC3356W

Silicon Epitaxial Planar Transistor

FEATURES ●Lownoiseandhighgain:NF=1.1dBTYP, Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain:MAG=13dBTYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor.

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

2SC3356W

Silicon NPN transistor in a SOT-323 Plastic Package

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SC3356

NPNTransistors

Features Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

2SC3356

Itisanultra-high-frequencylow-noisetransistor,usingplanarNPNsiliconoutside

Description 2SC3356isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside. Extendedbipolarprocess.Ithashighpowergain,lownoisefigure,largedynamicrangeandidealcurrentcharacteristics. Use SOT-23/SC-59SMDpackage,mainlyusedinVHF,UHFandCATVhi

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

2SC3356

NPNPlastic-EncapsulateTransistors

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

2SC3356

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lownoiseandhighpowergain. Applications lownoiseamplifieratVHF,UHFandCATVbandapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SC3356

LowNoiseandHighGain

DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES ?LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

2SC3356

NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold

NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold FEATURES ?Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz ?Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA,

CEL

California Eastern Labs

2SC3356

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半導(dǎo)體美科半導(dǎo)體股份（香港）有限公司

2SC3356

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

2SC3356

HIGHFREQUENCYLOWNOISEAMPLIFIER

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC3356

SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

2SC3356

SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband.

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

2SC3356

NPNSiliconRFTransistor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC3356

SOT-23

High-FrequencyAmplifierTransistor

GSMEGuilin Strong Micro-Electronics Co., Ltd.

桂微桂林斯壯桂微電子有限責(zé)任公司(簡(jiǎn)稱‘桂微’)

2SC3356

NPNSiliconRFTransistor

NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold *Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz *Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA,f=1GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC3356

HIGHFREQUENCYLOWNOISEAMPLIFIER

HIGHFREQUENCYLOWNOISEAMPLIFIER ■DESCRIPTION TheUTC2SC3356isdesignedforsuchapplicationsas:DC/DCconverters,supplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.r

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC3356

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

2SC3356

HIGHFREQUENCYLOWNOISEAMPLIFIER

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC3356

NPNSiliconPlastic-EncapsulateTransistor

FEATURES ?PowerDissipation ?RoHSCompliantProduct

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SC3356W

  • 制造商：

    BILIN

  • 制造商全稱：

    Galaxy Semi-Conductor Holdings Limited

  • 功能描述：

    Silicon Epitaxial Planar Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
BILIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
國(guó)產(chǎn)
23+
SOT-323
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ON
24+
SC-70SOT-323
15000
詢價(jià)
SK
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SK
22+
SOT-23
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
SK
17+/18+
SOT-23
6352
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
SK
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
 詢價(jià)
SK
23+
原裝正品現(xiàn)貨
10000
SOT-23
 詢價(jià)
RENESAS/瑞薩
2022
SOT-23
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
NEC
22+
SOT-23
689000
原裝進(jìn)口現(xiàn)貨支持實(shí)單
 詢價(jià)
更多2SC3356W供應(yīng)商 更新時(shí)間2024-11-8 17:58:00

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