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2SC380

Low Level and General Purpose Amplifiers

MICRO-ELECTRONICS

Micro Electronics

2SC3802K

Epitaxial Planar NPN Silicon Transistor

EpitaxialPlanarNPNSiliconTransistor UHF/VHFOscillator?Mixer

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SC3803

NPN EPITAXIAL TYPE (HIGH FREQUENCY , VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)

HighFrequencyAmplifierApplications VideoAmplifierApplications HighSpeedSwitchingApplications Hightransitionfrequency:fT=200MHz(typ.) Lowcollectoroutputcapacitance:Cob=3.5pF(typ.) Complementaryto2SA1483

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC3803

High Frequency Amplifier Applications

Features HighTransitionFrequency:fT=200MHz(typ.) LowCollectorOutputCapacitance:Cob=3.5pF(typ.) Complementaryto2SA1483

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SC3803

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC3803

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

HighFrequencyAmplifierApplications VideoAmplifierApplications HighSpeedSwitchingApplications Hightransitionfrequency:fT=200MHz(typ.) Lowcollectoroutputcapacitance:Cob=3.5pF(typ.) Complementaryto2SA1483

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC3803-R

High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

HighFrequencyAmplifierApplications VideoAmplifierApplications HighSpeedSwitchingApplications Hightransitionfrequency:fT=200MHz(typ.) Lowcollectoroutputcapacitance:Cob=3.5pF(typ.) Complementaryto2SA1483

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC3805

NPN EPITAXIAL TYPE (TV HORIZONTAL DEFLECTION, TV CHROMA OUTPUT APPLICATIONS)

TVHorizontalDeflectionOutputApplications TVChromaOutputApplications Highvoltage:VCEO=300V Lowoutputcapacitance:Cob=3.0pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC3805

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=300V(Min) ·DCCurrentGain- :hFE=30(Min)@IC=20mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3805

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=15(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3805

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=300V(Min) ·DCCurrentGain- :hFE=30(Min)@IC=20mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3805-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=300V(Min) ·DCCurrentGain- :hFE=30(Min)@IC=20mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3805-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=300V(Min) ·DCCurrentGain- :hFE=30(Min)@IC=20mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3807

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

HighhFE,Low-FrequencyGeneral-PurposeAmplifierApplications Features ·Largecurrentcapacity(IC=2A). ·AdoptionofMBITprocess. ·HighDCcurrentgain(hFE=800to3200). ·Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.5V). ·HighVEBO(VEBO≥15V). Applications ·Lowfrequency

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC3807C

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V/2AHigh-hFE,LowFrequencyGeneral-PurposeAmplifierApplications Applications ?Low-frequencygeneral-purposeamplifiers,drivers. Features ?Largecurrentcapacity(IC=2A). ?AdoptionofMBITprocess. ?HighDCcurrentgain(hFE=1000to2000). ?Lowcollector-to-emi

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC3807MP

NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

25V/2AHigh-hFE,LowFrequencyGeneral-PurposeAmplifierApplications Applications ?Low-frequencygeneral-purposeamplifiers,drivers. Features ?Largecurrentcapacity(IC=2A). ?AdoptionofMBITprocess. ?HighDCcurrentgain(hFE=1000to2000). ?Lowcollector-to-emittersaturationv

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC3808

High-hFE, Low-Frequency General-Purpose Amp Applications?????????

HighhFE,Low-FrequencyGeneral-PurposeAmplifierApplications Features ·Largecurrentcapacity(IC=2A). ·AdoptionofMBITprocess. ·HighDCcurrentgain(hFE=800to3200). ·Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.5V). ·HighVEBO(VEBO≥15V). Applications ·Lowf

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC3809

NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

FEATURES ?The2SC3809isanNPNsiliconepitaxialdualtransistorhaving alarge-gain-bandwidthproductperformanceinawideoperating currentrange. ?Dualchipsinonepackagecanachievehighperformancefor differentialamplifiersandcurrentmodelogic(CML)circuits.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC3809

SILICON TRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR FORMICROWAVEAMPLIFIERSANDULTRAHIGHSPEEDSWITCHINGS INDUSTRIALUSE FEATURES ·The2SC3809isanNPNsiliconepitaxialdualtransistorhaving alarge-gain-bandwidthproductperformanceinawideoperating currentrange. ·Dualchipsinonepackagecan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC380TM

NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

HighFrequencyAmplifierApplications Highpowergain:Gpe=29dB(typ.)(f=10.7MHz) RecommendedforFMIF,OSCstageandAMCONV.IFstage.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

晶體管資料

  • 型號:

    2SC380(A)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    射頻/高頻放大 (HF)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    35V

  • 最大電流允許值:

    0.03A

  • 最大工作頻率:

    250MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    3DG121C,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號:

    A-20

  • vtest:

    35

  • htest:

    250000000

  • atest:

    0.03

  • wtest:

    0

詳細(xì)參數(shù)

  • 型號:

    2SC380

  • 功能描述:

    2SC380 TO98 S3B2A

供應(yīng)商型號品牌批號封裝庫存備注價格
東芝
24+
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500
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2023+環(huán)?,F(xiàn)貨
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10
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con
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11+
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TOS
23+
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9526
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更多2SC380供應(yīng)商 更新時間2024-12-26 10:50:00