零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ?Highspeed. ?Highbreakdownvoltage(VCBO=1600V). ?Highreliability(AdoptionofHVPprocess). ?AdoptionofMBITprocess. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ?Highspeed. ?Highbreakdownvoltage(VCBO=1600V). ?Highreliability(AdoptionofHVPprocess). ?AdoptionofMBITprocess. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ?Highspeed. ?Highbreakdownvoltage(VCBO=1600V). ?Highreliability(AdoptionofHVPprocess). ?AdoptionofMBITprocess. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1600V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE ?Highgain,lownoise ?Smallreversetransfercapacitance ?Canoperateatlowvoltage | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE ?Highgain,lownoise ?Smallreversetransfercapacitance ?Canoperateatlowvoltage | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPN EPITAXIAL SILICON TRANSISTOR FEATURE ?Highgain,lownoise ?Smallreversetransfercapacitance ?Canoperateatlowvoltage | CEL California Eastern Labs | CEL | ||
NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE ?Idealformedium-outputapplications ?Highgain,lownoise ?Smallreversetransfercapacitance ?Canoperateatlowvoltage | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE ?Idealformedium-outputapplications ?Highgain,lownoise ?Smallreversetransfercapacitance ?Canoperateatlowvoltage | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPN EPITAXIAL SILICON TRANSISTOR FEATURE ?Idealformedium-outputapplications ?Highgain,lownoise ?Smallreversetransfercapacitance ?Canoperateatlowvoltage | CEL California Eastern Labs | CEL | ||
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Silicon NPN triple diffusion planar type Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, DC-AC INVERTER APPLICATIONS) HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications DC-ACInverterApplications ?Excellentswitchingtimes:tr=0.5μs(max) tf=0.3μs(max)(IC=0.4A) ?Highcollectorbreakdownvoltage:VCEO= | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=13(Min)@IC=1mA ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforaudioandgeneralpurposeapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS) SwitchingRegulatorApplications High-VoltageSwitchingApplications DC-DCConverterApplications ?High-speedswitching:tf=0.3μs(max)(IC=1.2A) ?Highcollectorbreakdownvoltage:VCEO=400V ?HighDCcurrentgain:hFE=20(min)(IC=0.3A) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
isc Silicon NPN Power Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
High Speed Switching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
60000 |
詢價 | ||||
SANYO |
23+ |
TO-3P |
4000 |
特價庫存 |
詢價 | ||
三年內 |
1983 |
只做原裝正品 |
詢價 | ||||
SANYO/三洋 |
23+ |
TO-3P |
10000 |
公司只做原裝正品 |
詢價 | ||
SANYO/三洋 |
22+ |
TO-3P |
6000 |
十年配單,只做原裝 |
詢價 | ||
SANYO/三洋 |
22+ |
TO-3P |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
SANYO |
24+ |
TO-3P |
37650 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 | ||
SANYO/三洋 |
24+ |
TO3PF |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費! |
詢價 | ||
SANYO/三洋 |
23+ |
TO-3P |
5000 |
原廠授權代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | ||
SANYO/三洋 |
2022+ |
65 |
全新原裝 貨期兩周 |
詢價 |
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