2SC5580

Silicon NPN epitaxial planer type(For high-frequency oscillation / switching)

SiliconNPNepitaxialplanertype Forhigh-frequencyoscillation/switching ■Features ?HightransitionfrequencyfT ?S-minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.

2SC5583

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Forhorizontaldeflectionoutput ■Features ?Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ?High-speedswitching ?Wideareaofsafeoperation(ASO)

2SC5584

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

■Overview Basedonaccumulatedmanufacturingtechnology,thesehorizontaldeflectiontransistorsforTVsofferhighperformanceandcompactdesign.Theycanalsowithstandhighvoltageandmaintainlowloss.Theyalsohaveabroadareaofsafeoperation,despiteanabsolutelyminimalchipareaw

2SC5584

Horizontal Deflection Transistor Series for TV

■Overview Basedonaccumulatedmanufacturingtechnology,thesehorizontaldeflectiontransistorsforTVsofferhighperformanceandcompactdesign.Theycanalsowithstandhighvoltageandmaintainlowloss.Theyalsohaveabroadareaofsafeoperation,despiteanabsolutelyminimalchipareaw

2SC5585

Low frequency transistor (12V, 0.5A)

Thetransistorof500mAclasswhichwentonlyinto2125sizeconventionallywasattainedin1608sizesor1208sizes. Features 1)Highcurrent. 2)LowVCE(sat). VCE(sat)≤250mVatIC=200mA/IB=10mA Applications Forswitching Formuting

2SC5585

NPN Silicon General Purpose Transistor

FEATURES ?HighCurrent. ?LowVCE(sat).VCE(sat)≦0.25V(@IC=200mA/IB=10mA) ?Complementof2SC4738. Application ?GeneralPurposeAmplification.

2SC5585

Low Frequency Transistor

Features Higcurrent. LowVCE(sat):VCE(sat)250mVatIC=200mA/IB=10mA

2SC5585

NPN TRANSISTOR

FEATURES: *Highcurrent. *LowVCE(sat).VCE(sat).250mVatIC=200mA/IB=10mA

2SC5585

LOW FREQUENCY TRANSISTOR

FEATURES ●Highcurrent. ●LowVCE(sat). Applications ●Forswitching. ●Formuting.

2SC5585

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●Highcurrent. ●LowVCE(sat).VCE(sat)≤250mVatIC=200mA/IB=10mA

2SC5585F

NPN Silicon General Purpose Transistor

FEATURES LowVCE(sat)-VCE(sat)250mVatIC=200mA/IB=10mA HighCurrent

2SC5587

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFORHIGH RESOLUTION DISPLAY,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS HighVoltage:VCBO=1500V LowSaturationVoltage:VCE(sat)=3V(Max.) HighSpeed:tf(2)=0.1μs(Typ.)

2SC5588

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)

HORIZONTALDEFLECTIONOUTPUTFORSUPER HIGHRESOLUTIONDISPLAY COLORTVFORDIGITALTV&HDTV HIGHSPEEDSWITCHINGAPPLICATIONS
HighVoltage:VCBO=1700V
LowSaturationVoltage:VCE(sat)=3V(Max.)
HighSpeed:tf(2)=0.1μs(Typ.)

2SC5589

NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFOR HIGHRESOLUTIONDISPLAY,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS HighVoltage:VCBO=1500V LowSaturationVoltage:VCE(sat)=3V(Max.) HighSpeed:tf(2)=0.1μs(Typ.)

2SC5589

isc Silicon NPN Power Transistor

DESCRIPTION ·HighCollector-BaseVoltage- :VCBO=1500V(Min) ·HighSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhorizontaldeflectionoutputapplications.

2SC5584

isc Silicon NPN Power Transistor

2SC5585

NPN Silicon General Purpose Transistor

2SC5585_11

NPN Silicon General Purpose Transistor

2SC5585_15

NPN Silicon General Purpose Transistor

2SC5586

isc Silicon NPN Power Transistor