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2SC5600

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2ELEMENTS) INAFLAT-LEAD6-PINTHIN-TYPEULTRASUMERMINIMOLD FEATURES ?Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=5.0GHzTYP.,?S21e?2=4.0dBTYP.@VCE=1V,IC=5mA,f=2GHz ?Built-in2transistors(2′2SC5600) ?F

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5600

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2ELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES ?Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=5.0GHzTYP.,?S21e?2=4.0dBTYP.@VCE=1V,IC=5mA,f=2GHz ?Built-in2transistors(2′2SC5600) ?6-pinlead-lessminimol

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5600

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5435,2SC5600) Q1:Built-inhigh-gaintransistor fT=12.0GHzTYP.,?S21e?2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Bui

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5606

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5606

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

CEL

California Eastern Labs

2SC5606

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5606-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5606-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

CEL

California Eastern Labs

2SC5606-T1

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5606-T1

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

CEL

California Eastern Labs

2SC5606-T1

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5606-T1-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

CEL

California Eastern Labs

2SC5606-T1-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES ?Suitableforhigh-frequencyoscillation ?fT=25GHztechnologyadopted ?3-pinultrasuperminimold(19,1608PKG)package

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5607

DC / DC Converter Applications

DC/DCConverterApplications Features ?AdoptionofMBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. ?Highallowablepowerdissipation. Applications ?Relaydrivers,lampdrivers,motordrivers,strob

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SC5609

Silicon PNP epitaxial planer type

*HighfowardcurrenttransferratiohFE *SSS-minitypepackage,allowingdownsizingandthinningoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Semiconductor

松下松下電器

2SC5606

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5606_1

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5606-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5606-T1

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5606-T1-A

NPN SILICON RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

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NEC
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NEC
23+
SOT423
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SOT-423
23+
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NEC
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NEC
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NEC
2020+
SOT523
6000
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NEC
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更多2SC560供應(yīng)商 更新時(shí)間2023-6-8 12:14:00

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