2SC5667中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

NPN SILICON RF TRANSISTOR FOR

LOW NOISE × HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

FEATURES

? Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA

? Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA

? High fT: fT = 21 GHz TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA

? fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted

? 3-pin ultra super minimold (t = 0.75 mm)