零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
DC / DC Converter Applications PNP/NPNEpitaxialPlanarSiliconTransistors DC/DCConverterApplications Features ?AdoptionofFBETandMBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. ?Highallowablepowerdissipation. Applicat | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TOSHIBA Transistor Silicon NPN Epitaxial Type High-SpeedSwitchingApplications DC-DCConverterApplications DC-ACConverterApplications ?HighDCcurrentgain:hFE=400to1000(IC=0.3A) ?Lowcollector-emittersaturationvoltage:VCE(sat)=0.14V(max) ?High-speedswitching:tf=120ns(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBA Transistor Silicon NPN Epitaxial Type High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications ?HighDCcurrentgain:hFE=400to1000(IC=0.5A) ?Lowcollector-emittersaturationvoltage:VCE(sat)=0.15V(max) ?High-speedswitching:tf=50ns(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Marking:2C;Package:PW-Mini;Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBA Transistor Silicon NPN Epitaxial Type High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications ?HighDCcurrentgain:hFE=400to1000(IC=0.5A) ?Lowcollector-emittersaturationvoltage:VCE(sat)=0.15V(max) ?High-speedswitching:tf=90ns(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ROHM |
24+ |
30000 |
詢價 | ||||
三洋 |
24+ |
SOT-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
SANYO |
24+ |
TO-252 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
三洋 |
23+ |
SOT-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
三洋 |
2022 |
SOT-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
SANYO/三洋 |
22+ |
TO-251 |
6000 |
十年配單,只做原裝 |
詢價 | ||
SANYO/三洋 |
23+ |
TO-251 |
20000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | ||
三洋 |
23+ |
NA/ |
700 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
SANYO/三洋 |
2022+ |
TO-252 |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
SANYO/三洋 |
24+ |
SMD |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 |
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