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2SC5761-T2

NPNSiGeRFTRANSISTORFORLOWNOISE?HIGH-GAINAMPLIFICATION

FEATURES ?Idealforlownoise?high-gainamplification NF=0.9dBTYP.@VCE=2V,IC=5mA,f=2GHz ?Maximumstablepowergain:MSG=20.0dBTYP.@VCE=2V,IC=20mA,f=2GHz ?SiGetechnology(fT=60GHz,fmax=60GHz) ?Flat-lead4-pinthin-typesuperminimold(M04)packag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5761-T2

NPNSiGeRFTRANSISTORFORLOWNOISE&HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04)

NPNSiGeRFTRANSISTORFOR LOWNOISE?HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealforlownoise?high-gainamplification NF=0.9dBTYP.@VCE=2V,IC=5mA,f=2GHz ?Maximumstablepowergain:MSG=20.0dBTYP.@VCE=2V,IC=20mA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    2SC5761-T2-A

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

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更多2SC5761-T2-A供應(yīng)商 更新時(shí)間2024-12-28 11:00:00