2SC5800

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5435,2SC5800) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=11.0dBTYP.@VCE=3V,IC=10mA,f=2GHz

2SC5800

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5436,2SC5800) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Bui

2SC5800

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE

FEATURES ?Lowphasedistortion,lowvoltageoperation ?IdealforOSCapplications ?Flat-lead3-pinthin-typeultrasuperminimoldpackage

2SC5800

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES ?2differentbuilt-intransistors(NESG2046M33,2SC5800) Q1:HighgainSiGetransistor fT=18GHzTYP.,?S21e?2=13dBTYP.@VCE=1V,IC=15mA,f=2GHz Q2:Low

2SC5800

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2ELEMENTS) INAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES ?LowphasedistortiontransistorsuitedforOSCapplications fT=4.5GHzTYP.,?S21e?2=4.0dBTYP.@VCE=1V,IC=5mA,f=2GHz ?Built-in2transistors(2×2SC5800) ?Flat-le

2SC5800

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2ELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES ?Built-inlowphasedistortiontransistorsuitedforOSCapplications fT=4.5GHzTYP.,?S21e?2=4.0dBTYP.@VCE=1V,IC=5mA,f=2GHz ?Built-in2transistors(2′2SC5800) ?6-pinlead-lessmini

2SC5800

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2ELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD FEATURES ?Built-inlowvoltageoperation,lowphasedistortiontransistorsuitedforOSCapplications fT=4.5GHzTYP.,?S21e?2=4.0dBTYP.@VCE=1V,IC=5mA,f=2GHz ?Built-in2transistors(2×2SC

2SC5800

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2ELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES ?Built-inlowphasedistortiontransistorsuitedforOSCapplications fT=4.5GHzTYP.,?S21e?2=4.0dBTYP.@VCE=1V,IC=5mA,f=2GHz ?Built-in2transistors(2′2SC5800) ?

2SC5800

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2ELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD FEATURES ?Built-inlowvoltageoperation,lowphasedistortiontransistorsuitedforOSCapplications fT=4.5GHzTYP.,?S21e?2=4.0dBTYP.@VCE=1V,IC=5mA,f=2GHz ?Built-in2transistors(2×2SC

2SC5800-T1

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE

FEATURES ?Lowphasedistortion,lowvoltageoperation ?IdealforOSCapplications ?Flat-lead3-pinthin-typeultrasuperminimoldpackage

2SC5801

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD

NPNSILICONRFTRANSISTORFORHIGH-FREQUENCYLOWNOISE3-PINLEAD-LESSMINIMOLD FEATURES ?Lowphasedistortion,lowvoltageoperation ?IdealforOSCapplications ?3-pinlead-lessminimoldpackage

2SC5801

NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR HIGH-FREQUENCYLOWNOISE 3-PINLEAD-LESSMINIMOLD FEATURES ?Lowphasedistortion,lowvoltageoperation ?IdealforOSCapplications ?3-pinlead-lessminimoldpackage

2SC5801-T3

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD

NPNSILICONRFTRANSISTORFORHIGH-FREQUENCYLOWNOISE3-PINLEAD-LESSMINIMOLD FEATURES ?Lowphasedistortion,lowvoltageoperation ?IdealforOSCapplications ?3-pinlead-lessminimoldpackage

2SC5801-T3

NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR HIGH-FREQUENCYLOWNOISE 3-PINLEAD-LESSMINIMOLD FEATURES ?Lowphasedistortion,lowvoltageoperation ?IdealforOSCapplications ?3-pinlead-lessminimoldpackage

2SC5802

Silicon NPN Power Transistors

*WithTO-3P(H)ISpackage *Highvoltage;highspeed *Wideareaofsafeoperation APPLICATIONS *Forhighvoltagecolordisplayhorizontaldeflectionoutputapplications.

2SC5804

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5804isasuperminipackageresinsealedsiliconNPNepitaxialtransistor,Itisdesignedforlowfrequencyapplication. Sinceitisasuper-thinflatleadtypepackage,ahigh-densitymountingarepossible. Complementarywith2SC3052. FEATURE ●Super-thinflatlead

2SC5807

SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5807isasiliconNPNepitaxialTransistor. Itdesignedwithhighcollectorcurrentandhighcollectordissipation. FEATURE ●HighcollectorcurrentIC=5A ●SmallcollectortoEmittersaturationvoltage VCE(sat)=0.25VTYP.(@IC=4A,IB=100mA) ●Highcollecto

2SC5808

Switching Power Supply Applications

SwitchingPowerSupplyApplications Features ?Highbreakdownvoltage. ?Highspeedswitching. ?WideASO. ?AdoptionofMBITprocess.

2SC5808

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.3A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

2SC5808

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.3A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter