2SC6140

Transistor Silicon NPN Epitaxial Type

○AudioFrequencyAmplifierApplications ?Highcollectorvoltage:VCEO=160V ?Smallcollectoroutputcapacitance:Cob=12pF(typ.) ?Hightransitionfrequency:fT=100MHz(typ.) ?Complementaryto2SA2220

2SC6140

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC6141

230V / 15A, AF100W Output Applications

230V/15A,AF100WOutputApplications Features ?Largecurrentcapacitance. ?WideASOandhighdurabilityagainstbreakdown. ?AdoptionofMBITprocess. Applications ?230V/15A,AF100Woutputapplications.

2SC6142

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC6144

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-CurrentSwitchingApplications Features ?AdoptionofMBITprocess. ?Highcurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. Applications ?Relaydrivers,lampdrivers,motordrivers.

2SC6144

isc Silicon NPN Power Transistors

DESCRIPTION ?Collector-EmitterSaturationVoltage- :VCE(sat)=0.36V(Max.)@IC=6A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Relaydrivers,lampdrivers,motordri

2SC6144SG

High-Current Switching Applications

NPNEpitaxialPlanarSiliconTransistor Features ?AdoptionofMBITprocess ?Largecurrentcapacitance(IC=10A) ?Lowcollector-to-emittersaturationvoltage(VCE(sat)=180mV(typ.)) ?High-speedswitching(tf=25ns(typ.)) Applications ?Relaydrivers,lampdrivers,motordrivers

2SC6144SG

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS

BipolarTransistor 50V,10A,LowVCE(sat)NPNTO-220F-3FS Features ?AdoptionofMBITprocess ?Largecurrentcapacitance(IC=10A) ?Lowcollector-to-emittersaturationvoltage(VCE(sat)=180mV(typ.)) ?High-speedswitching(tf=25ns(typ.)) Applications ?Relaydrivers,lampdrivers,motor

2SC6146

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

NPNTripleDiffusedPlanarSiliconTransistor Features ?Highbreakdownvoltage. ?Ultrahigh-speedswitching. ?WideASO. ?AdoptionofMBITprocess.

2SC6142

High Voltage Switching Applications

2SC6144S

isc Silicon NPN Power Transistors

2SC6145

Audio Amplification Transistor

2SC6145

isc Silicon NPN Power Transistor

2SC6145A

Audio Amplification Transistor

2SC6145A

isc Silicon NPN Power Transistor

2SC6144

包裝：散裝 封裝/外殼：TO-220-3 整包 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 50V 10A TO220ML

2SC6144SG

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-220-3 整包 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 50V 10A TO220F-3FS

2SC6145

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-3P-3，SC-65-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 230V 15A TO3P