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2SD1200

MEDIUM POWER TRANSISTOR

Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD1200F

MEDIUM POWER TRANSISTOR

Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD1200F

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

2SD1203T-E

Bipolar Transistor

Features ?Lowcollector-to-emittersaturationvoltage ?HighcurrentandhighfT ?ExcellentlinearityofhFE ?Fastswitchingspeed ?Smallandslimpackagemakingiteasytomake2SB1203/2SD1803-appliedsetssmaller Applications ?Relaydrivers,high-speedinverters,converters,andot

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SD1203T-H

Bipolar Transistor

Features ?Lowcollector-to-emittersaturationvoltage ?HighcurrentandhighfT ?ExcellentlinearityofhFE ?Fastswitchingspeed ?Smallandslimpackagemakingiteasytomake2SB1203/2SD1803-appliedsetssmaller Applications ?Relaydrivers,high-speedinverters,converters,andot

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SD1205

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

SiliconNPNepitaxialplanartypedarlington Forlow-frequencyamplification ■Features ?ForwardcurrenttransferratiohFEisdesignedhigh,whichisappropriatetothedrivercircuitofmotorsandprinterhammer:hFE=4000to20000. ?Ashuntresistorisomittedfromthedriver. ?Mtype

PanasonicPanasonic Semiconductor

松下松下電器

2SD1205A

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

SiliconNPNepitaxialplanartypedarlington Forlow-frequencyamplification ■Features ?ForwardcurrenttransferratiohFEisdesignedhigh,whichisappropriatetothedrivercircuitofmotorsandprinterhammer:hFE=4000to20000. ?Ashuntresistorisomittedfromthedriver. ?Mtype

PanasonicPanasonic Semiconductor

松下松下電器

2SD1207

Large-Current Switching Applications

Large-CurrentSwitchingApplications Features ?FBETandMBITprocessed(OriginalprocessofSANYO). ?Lowsaturationvoltage. ?LargecurrentcapacityandwideASO. Applications ?Powersupplies,relaydrivers,lampdrivers,andautomotivewiring.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SD1207

Large-Current Switching Applications

Large-CurrentSwitchingApplications Features ?FBETandMBITprocessed(OriginalprocessofSANYO). ?Lowsaturationvoltage. ?LargecurrentcapacityandwideASO. Applications ?Powersupplies,relaydrivers,lampdrivers,andautomotivewiring.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

2SD1207

Large-Current Switching Applications

Features ?FBETandMBITprocessed ?Lowsaturationvoltage ?LargecurrentcapacityandwideSOA Applications ?Powersupplies,relaydrivers,lampdrivers,andautomotivewiring

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SD1207S-AE

Large-Current Switching Applications

Features ?FBETandMBITprocessed ?Lowsaturationvoltage ?LargecurrentcapacityandwideSOA Applications ?Powersupplies,relaydrivers,lampdrivers,andautomotivewiring

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SD1208

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Wideareaofsafeoperation ?HighDCcurrentgain ?Darlington APPLICATIONS ?PowerregulatorforlineoperatedTV

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SD1208

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Wideareaofsafeoperation ?HighDCcurrentgain ?Darlington APPLICATIONS ?PowerregulatorforlineoperatedTV

SAVANTIC

Savantic, Inc.

2SD1209

Silicon NPN Epitaxial, Darlington

?Lowfrequencypoweramplifier ?Complementarypairwith2SA1193(K)

HitachiHitachi Semiconductor

日立日立公司

2SD1209

Silicon NPN Epitaxial, Darlington

Application ?Lowfrequencypoweramplifier ?Complementarypairwith2SA1193(K)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SD1209K

Silicon NPN Epitaxial, Darlington

?Lowfrequencypoweramplifier ?Complementarypairwith2SA1193(K)

HitachiHitachi Semiconductor

日立日立公司

2SD1209K

Silicon NPN Epitaxial, Darlington

Application ?Lowfrequencypoweramplifier ?Complementarypairwith2SA1193(K)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SD1209KTZ-E

Silicon NPN Epitaxial, Darlington

Application ?Lowfrequencypoweramplifier ?Complementarypairwith2SA1193(K)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SD1202

Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SD1203T-E

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    2SD120

  • 功能描述：

    MEDIUM POWER TRANSISTOR(-80V, -0.7A)

供應(yīng)商型號品牌批號封裝庫存備注價格
ROHM
23+
TO126
1125
特價庫存
 詢價
SANYO/三洋
22+
TO-126
50000
只做正品原裝,假一罰十,歡迎咨詢
 詢價
SANYO/三洋
24+
TO-126
10000
全新原裝現(xiàn)貨庫存
 詢價
24+
TO-3
10000
詢價
23+
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
CS
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CS
23+
NA/
29050
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
SANYO
21+
TO252
7000
原裝現(xiàn)貨假一賠十
 詢價
SANYO
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
SANYO
22+
TO252
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
 詢價
更多2SD120供應(yīng)商 更新時間2025-1-1 14:02:00

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