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2SD2164中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

2SD2164
廠商型號

2SD2164

功能描述

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

文件大小

128.05 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會社官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-7 20:00:00

晶體管資料

  • 型號:

    2SD2164

  • 別名:

    2SD2164三極管、2SD2164晶體管、2SD2164晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    HI_BETA_LO_SAT

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    3A

  • 最大工作頻率:

    110MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    2SD1593,2SD1944,2SD2012,2SD2156,

  • 最大耗散功率:

  • 放大倍數(shù):

    β>800

  • 圖片代號:

    B-10

  • vtest:

    60

  • htest:

    110000000

  • atest:

    3

  • wtest:

    0

2SD2164規(guī)格書詳情

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor.

In addition, this transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction.

FEATURES

? High hFE and low VCE(sat):

hFE ? 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)

VCE(SAT) ? 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)

? Full mold package that does not require an insulating board or

insulation bushing

產(chǎn)品屬性

  • 型號:

    2SD2164

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

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