| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SD669 | Silicon NPN Epitaxial Application Lowfrequencypoweramplifiercomplementarypairwith2SB649/A(PNP) | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | |
2SD669 | NPN Epitaxial Planar Transistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | |
2SD669 | Plastic-Encapsulated Transistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | |
2SD669 | Silicon NPN Power Transistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications | SAVANTIC Savantic, Inc. | SAVANTIC | |
2SD669 | NPN Silicon Plastic-Encapsulate Transistor Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Capableof1WattsofPowerDissipation. ?Collector-current1.5A ?Collector-baseVoltage180V ? | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | |
2SD669 | Silicon NPN transistor in a TO-126 Plastic Package. Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features Complementarypairwith2SB649(A). Applications Lowfrequencypoweramplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | |
2SD669 | NPN Type Plastic Encapsulate Transistors FEATURES PowerdissipationPCM:1mW（Tamb=25℃） CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | |
2SD669 | TO-126 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | |
2SD669 | TRANSISTOR (NPN) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | |
2SD669 | TRANSISTOR (NPN) TRANSISTOR(NPN) FEATURES Lowfrequencypoweramplifiercomplementarypair with2SB649/A | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | |
2SD669 | TO-252-2L Plastic-Encapsulate Transistors FEATURES LowFrequencyPowerAmplifierComplementary Pairwith2SB649 | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | |
2SD669 | isc Silicon NPN Power Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | |
Silicon NPN Epitaxial Application Lowfrequencypoweramplifiercomplementarypairwith2SB649/A(PNP) | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
NPN Epitaxial Planar Transistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
Silicon NPN Power Transistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
TO-126 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
NPN Silicon Plastic-Encapsulate Transistor Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Capableof1WattsofPowerDissipation. ?Collector-current1.5A ?Collector-baseVoltage180V ? | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_視頻輸出 （Vi
- 封裝形式：
直插封裝
- 極限工作電壓：
180V
- 最大電流允許值：
1.5A
- 最大工作頻率：
140MHZ
- 引腳數(shù)：
3
- 可代換的型號(hào)：
2SC3117,
- 最大耗散功率：
20W
- 放大倍數(shù)：
- 圖片代號(hào)：
B-21
- vtest：
180
- htest：
140000000
- atest：
1.5
- wtest：
20
詳細(xì)參數(shù)
- 型號(hào)：
2SD669
- 制造商：
HITACHI
- 制造商全稱：
Hitachi Semiconductor
- 功能描述：
Silicon NPN Epitaxial
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HIT |
2024 |
TO-126 |
58209 |
16余年資質(zhì) 絕對(duì)原盒原盤代理渠道 更多數(shù)量 |
詢價(jià) | ||
CJ |
23+ |
5000 |
原裝正品現(xiàn)貨,德為本,正為先,通天下! |
詢價(jià) | |||
NEC |
23+ |
TO-126 |
9896 |
詢價(jià) | |||
HIT |
17+ |
TO126 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
HIT |
2020+ |
TO-126 |
2300 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
HIT |
24+ |
TO-92 |
20000 |
詢價(jià) | |||
HIT日立 |
23+ |
TO-126 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
HIT |
12+ |
TO-252 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
ISC |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
HIT |
19+ |
TO-126 |
59424 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) |
