| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
POWER TRANSISTORS(3A,60V,30W) NPNSILICONPOWERTRANSISTORS ...designedforuseinaudiofrequencypoweramplifierapplications | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Complementto2SB834 | WINGSWing Shing Computer Components 永盛電子永盛電子(香港)有限公司 | WINGS | ||
NPN EPITAXIAL TRANSISTOR DESCRIPTION TheUTC2SD880isdesignedforaudiofrequencypoweramplifierapplications. FEATURES *HighDCCurrentGain:hFE=200(Max.)(VCE=5V,IC=0.5A) *LowSaturationVoltage:VCE(SAT)=1.0V(Max.)(IC=3A,IB=0.3A) *HighPowerDissipation:PC=30W(TA=25°C) *Complementaryto2SB834 | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
Plastic-Encapsulated Transistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.5W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designedforlowfrequencypoweramplifierapplications. | DCCOM Dc Components | DCCOM | ||
Silicon NPN Power Transistors DESCRIPTION ?WithTO-220Cpackage ?Complementtotype2SB834 ?Lowcollectorsaturationvoltage APPLICATIONS ?Designedforuseinaudiofrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB834 ·Lowcollectorsaturationvoltage APPLICATIONS ·Designedforuseinaudiofrequency poweramplifierapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
NPN Silicon Epitaxial Power Transistor FEATURES: *Lowfrequencypoweramplifier *Complementto2SB834 | WEITRON Weitron Technology | WEITRON | ||
It is intented for use in power amplifier and switching applications. DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd | TGS | ||
TRANSISTOR (NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.5W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
TO-220-3L Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ?LowFrequencyPowerAmplifier ?Complementto2SB834 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
Marking：D880；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors FEATURES LowFrequencyPowerAmplifier Complementto2SB834 | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
Silicon NPN transistor in a TO-220 Plastic Package. Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features HighDCcurrentgain,lowsaturationvoltage,highpowerdissipation,complementaryto2SB834. Applications Audiofrequencypoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
NPN Silicon Power Transistors Features ?WithTO-220package ?Poweramplifierapplications ?CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0 | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
NPN Silicon Power Transistors Features ?WithTO-220package ?Poweramplifierapplications ?CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0 | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
SILICON PLASTIC POWER TRANSISTOR NPN2SD880Y 3A30W *Collector-EmitterVoltage:VCEO=60V *DCCurrentGain:20@IC=3A *TO-220Package | USHA Usha India Ltd. | USHA | ||
NPN Silicon Power Transistors Features ?WithTO-220package ?Poweramplifierapplications ?CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0 | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver) SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
PNP/NPN Epitaxial Planar Transistors PNP/NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
NPN MEDIUM POWER TRANSISTOR Description ThedeviceisaNPNtransistormanufacturedbyusingplanartechnologyresultinginruggedhighperformancedevices.ThecomplementaryPNPtypeis2SB772. Features ■Highcurrent ■Lowsaturationvoltage ■Complementto2SB772 Applications ■Voltageregulation ■Relaydriver ■ | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
3A
- 最大工作頻率：
3MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BD241A,BD537,BD577,BD937,D652,TIP31A,2SD712,3DA401A,
- 最大耗散功率：
30W
- 放大倍數(shù)：
- 圖片代號：
B-89
- vtest：
60
- htest：
3000000
- atest：
3
- wtest：
30
詳細(xì)參數(shù)
- 型號：
2SD88
- 制造商：
Toshiba/Hitachi
- 功能描述：
2SD880 N9H1D
- 功能描述：
TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB
- 制造商：
Toshiba America Electronic Components
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
藍(lán)箭 |
TO220 |
800000 |
2012 |
詢價(jià) | |||
11+ |
7325 |
詢價(jià) | |||||
24+ |
TO-220 |
10000 |
全新 |
詢價(jià) | |||
TOSHIBA |
12+ |
TO-252 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
TOS |
24+ |
原廠封裝 |
5500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
TOSHIBA |
23+ |
TO220 |
1100 |
特價(jià)庫存 |
詢價(jià) | ||
sanyo |
2339+ |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) | |||
FAIRCHILD |
16+ |
MT-200 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
ISC |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
長電 |
19+ |
TO-220 |
59429 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) |
