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2SJ506

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistanceRDS(on)=0.065?typ.(atVGS=–10V,ID=–5A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

HitachiHitachi Semiconductor

日立日立公司

2SJ506

Silicon P Channel MOS FET

*Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ506L

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistanceRDS(on)=0.065?typ.(atVGS=–10V,ID=–5A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

HitachiHitachi Semiconductor

日立日立公司

2SJ506L

Silicon P Channel MOS FET

*Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ506L-E

Silicon P Channel MOS FET

*Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ506S

Silicon P Channel MOS FET

*Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ506S

Hight Speed Power Switching

Features Lowon-resistance RDS(on)=0.065typ.(atVGS=-10V,ID=-5A) Lowdrivecurrent Highspeedswitching 4Vgatedrivedevices.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ506S

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistanceRDS(on)=0.065?typ.(atVGS=–10V,ID=–5A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

HitachiHitachi Semiconductor

日立日立公司

2SJ506STL-E

Silicon P Channel MOS FET

*Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ506(L)_15

Silicon P Channel MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ506S

P-Channel MOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ506STL-E

P-Channel 30-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ506

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    Silicon P Channel MOS FET High Speed Power Switching

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
RENESAS
2024
TO-252
13500
16余年資質(zhì) 絕對(duì)原盒原盤代理渠道 更多數(shù)量
 詢價(jià)
RENESAS
24+
SOT252
97000
詢價(jià)
VISHAY
13+
TO-92-2
7398
原裝分銷
 詢價(jià)
12+
TO-251
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
HITACHI
24+
SOT-252
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
renesas
19+
TO-252
59459
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
日立
SOT-252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價(jià)
HITACHI/日立
22+
SOT-252
20000
保證原裝正品,假一陪十
 詢價(jià)
HITACHI
21+
SOT-252
1988
原裝現(xiàn)貨假一賠十
 詢價(jià)
HITACHI
23+
TO-252
10000
公司只做原裝正品
 詢價(jià)
更多2SJ506供應(yīng)商 更新時(shí)間2025-1-4 17:06:00

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