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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
2SJ517YYTR-E	文件：79.18 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–4V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?2.5Vgatedrivedevices.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ517	文件：79.18 Kbytes Page：7 Pages	SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–4V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?2.5Vgatedrivedevices.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ517	文件：43.88 Kbytes Page：8 Pages	SiliconPChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–4V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?2.5Vgatedrivedevices.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ517YYTL-E	文件：79.18 Kbytes Page：7 Pages	SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–4V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?2.5Vgatedrivedevices.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

更多2SJ517YYTR-E供應商更新時間2025-2-1 11:00:00

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