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2SJ550

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ550

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ550L

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ550L

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ550L-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ550S

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ550S

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ550STL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ551

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ551

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ55

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon P Channel MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS/瑞薩
24+
TO263
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
 詢價(jià)
HITACHI/日立
24+
TO-262
500202
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
HITACHI
2016+
TO-263
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
HIT
24+
TO-251
20000
詢價(jià)
HIT
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
HITACHI/日立
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
NEC
2021+
TO-263
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
HITACHI
21+
TO-263
607
原裝現(xiàn)貨假一賠十
 詢價(jià)
HITACHI/日立
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多2SJ55供應(yīng)商 更新時(shí)間2025-2-4 13:48:00

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