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2SJ601

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ601

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

2SJ601

MOSFieldEffectTransistor

MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=31mMAX.(VGS=-10V,ID=-18A) RDS(on)2=46mMAX.(VGS=-4.0V,ID=-18A) LowCiss:Ciss=3300pFTYP. Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ601

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=31m?MAX.(VGS=–10V,ID=–18A) RDS(on)2=46m?MAX.(VGS=–4.0V,ID=–18A) ?Lowinputcapacitance:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ601

P-Channel60-V(D-S)MOSFET

FEATURES RDS(ON)14mQ@VGs=-10V(Typ) RDs(ON)16mQ@VGs=-4.5V(Typ) SuperhighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrent capability

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

2SJ601-Z

IscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=31mΩ(Max)@VGS=-10V DESCRIPTION ·Solenoid,motorandlampdriver

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SJ601-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ601-Z

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=31m?MAX.(VGS=–10V,ID=–18A) RDS(on)2=46m?MAX.(VGS=–4.0V,ID=–18A) ?Lowinputcapacitance:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
24+
TO252
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
 詢價
RENESAS/瑞薩
20+
TO-252
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
N
23+
TO-252
10000
公司只做原裝正品
 詢價
RENESAS/瑞薩
2022+
TO-252
32500
原廠代理 終端免費提供樣品
 詢價
RENESAS/瑞薩
2022+
TO-252
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
RENESAS/瑞薩
20+
TO-252
32500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
N
24+
TO-252
35400
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
RENESAS/瑞薩
23+
TO-252
30000
交期準(zhǔn)時服務(wù)周到
 詢價
NEC
17+
TO-252
6200
100%原裝正品現(xiàn)貨
 詢價
NEC
2018+
TO-252
11256
只做進口原裝正品!假一賠十!
 詢價
更多2SJ601-ZK供應(yīng)商 更新時間2025-1-16 15:38:00

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