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2SJ603

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=75mΩMAX.(VGS=?4.0V,ID=?13A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ603

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=48mMAX.(VGS=-10V,ID=-13A) RDS(on)2=75mMAX.(VGS=-4.0V,ID=-13A) ●LowCiss:Ciss=1900pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ603

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48m?MAX.(VGS=?10V,ID=?13A) RDS(on)2=75m?MAX.(VGS=?4.0V,ID=?13A) ?Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ603-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=75mΩMAX.(VGS=?4.0V,ID=?13A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ603-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48m?MAX.(VGS=?10V,ID=?13A) RDS(on)2=75m?MAX.(VGS=?4.0V,ID=?13A) ?Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ603-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48m?MAX.(VGS=?10V,ID=?13A) RDS(on)2=75m?MAX.(VGS=?4.0V,ID=?13A) ?Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ603-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=75mΩMAX.(VGS=?4.0V,ID=?13A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ603-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=75mΩMAX.(VGS=?4.0V,ID=?13A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ603-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-25A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ603-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48m?MAX.(VGS=?10V,ID=?13A) RDS(on)2=75m?MAX.(VGS=?4.0V,ID=?13A) ?Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
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21+
TO220
2000
原裝現(xiàn)貨假一賠十
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22+
TO220
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
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RENESAS
8
TO220
2400
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
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2023+
TO220
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
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RENESAS
23+
TO220
2000
全新原裝正品現(xiàn)貨,支持訂貨
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RENESAS
24+
con
35960
查現(xiàn)貨到京北通宇商城
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RENESAS
24+
con
35960
查現(xiàn)貨到京北通宇商城
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NEC
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
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NEC
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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更多2SJ603-AZ供應(yīng)商 更新時(shí)間2025-1-27 17:26:00

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