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2SJ606

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=15mMAX.(VGS=-10V,ID=-42A) RDS(on)2=23mMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=4800pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ606

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ606-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    2SJ606-AZ

  • 制造商：

    Renesas Electronics

  • 功能描述：

    Pch -60V -83A 15m@10V TO220AB

  • 功能描述：

    Pch -60V -83A 15m@10V TO220AB Cut Tape

  • 功能描述：

    Pch -60V -83A 15m@10V TO220AB Bulk

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    Pch MOSFET,60V,83A,12m ohm,TO-220AB

  • 制造商：

    Renesas

  • 功能描述：

    Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220AB

供應商型號品牌批號封裝庫存備注價格
RENESAS
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價
RENESAS/瑞薩
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RENESAS
22+
TO-220
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
 詢價
RENESAS
15+
TO-220
182
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
RENESAS
21+
TO-220
9866
詢價
RENESAS/瑞薩
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
 詢價
RENESAS/瑞薩
23+
NA/
590
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
RENESAS
2023+
TO-220
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價
更多2SJ606-AZ供應商 更新時間2024-12-28 10:20:00

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