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2SJ680

Field Effect Transistor Silicon P-Channel MOS Type (?-MOS V)

SwitchingApplications ChopperRegulator,DC/DCConverterandMotorDriveApplications ?Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) ?Highforwardtransferadmittance:|Yfs|=2.0S(typ.) ?Lowleakagecurrent:IDSS=?100μA(max)(VDS=?200V) ?Enhancementmode:Vth=?1.5to?3

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ680

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ681

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

RelayDrive,DC?DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain-sourceON-resistance:RDS(ON)=0.12?(typ.)(VGS=?10V) ●Highforwardtransferadmittance:|Yfs|=5.0S(typ.) ●Lowleakagecurrent:IDSS=?100μA(max)(VDS=?60V) ●Enhancementmode:Vth=?0.8

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ681

P-Channel 4 0 V (D-S) MOSFET

FEATURES ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

2SJ681Q

Relay Drive, DC??C Converter and Motor Drive Applications

RelayDrive,DC?DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain-sourceON-resistance:RDS(ON)=0.12?(typ.)(VGS=?10V) ●Highforwardtransferadmittance:|Yfs|=5.0S(typ.) ●Lowleakagecurrent:IDSS=?100μA(max)(VDS=?60V) ●Enhancementmode:Vth=?0.8

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ683

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?LoadS/WApplicaions. ?Avalancheresistanceguarantee.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

2SJ684

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?LoadS/WApplicaions. ?Avalancheresistanceguarantee.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

2SJ687

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES ?Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=?4.5V,ID=?10A) RDS(on)2=9.0mΩMAX.(VGS=?3.0V,ID=?10A) RDS(on)3=20mΩMAX.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ687

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES ?Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=?4.5V,ID=?10A) RDS(on)2=9.0mΩMAX.(VGS=?3.0V,ID=?10

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ687-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES ?Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=?4.5V,ID=?10A) RDS(on)2=9.0mΩMAX.(VGS=?3.0V,ID=?10A) RDS(on)3=20mΩMAX.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ687-ZK-E1-AY

P-Channel 30 V (D-S) MOSFET

FEATURES ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

2SJ687-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES ?Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=?4.5V,ID=?10A) RDS(on)2=9.0mΩMAX.(VGS=?3.0V,ID=?10

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ687-ZK-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES ?Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=?4.5V,ID=?10A) RDS(on)2=9.0mΩMAX.(VGS=?3.0V,ID=?10A) RDS(on)3=20mΩMAX.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ687-ZK-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES ?Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=?4.5V,ID=?10A) RDS(on)2=9.0mΩMAX.(VGS=?3.0V,ID=?10

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ680

Switching Applications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ680

Silicon P-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ680_06

Silicon P-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ680_09

Switching Applications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ681

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ681_09

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ68

  • 制造商：

    TOSHIBA

  • 制造商全稱：

    Toshiba Semiconductor

  • 功能描述：

    Switching Applications

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
TOSHIBA/東芝
23+
TO-252
10000
公司只做原裝正品
 詢價(jià)
TOSHIBA/東芝
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
TOSHIBA/東芝
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
TOSHIBA/東芝
22+
TO-252
6000
十年配單,只做原裝
 詢價(jià)
TOSHIBA/東芝
22+
TO-251
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
TOSHIBA/東芝
23+
NA/
106
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
TOSHIBA/東芝
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
TOS
24+
TO-252
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
ST
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價(jià)
TOSHIBA
11+
15600
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
更多2SJ68供應(yīng)商 更新時(shí)間2025-1-17 14:30:00

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