2SK1482中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SK1482 is N-channel vertical type MOS FET switching device which

can be directly driven from an IC operating with a 5 V single power supply.

The device featuring low on-state resistance is of the voltage drive type and

thus is ideal for driving actuators such as motors, solenoids, and relays.

FEATURES

? Low on-state resistance

RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A)

RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A)

? Voltage drive at logic level (VGS = 4 V) is possible.

? Bidirectional zener diode for protection is incorporated in

between the gate and the source.

? Inductive loads can be driven without protective circuit thanks

to the improved breakdown voltage between the drain and source.

? Can be used complementary with the 2SJ196.