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2SK170

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK170

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK170

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK170

FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK170

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK170-BL

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK170-GR

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK170-V

Low Noise Audio Amplifier Applications

LowNoiseAudioAmplifierApplications ?RecommendedforfirststagesofEQandM.C.headamplifiers. ?High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) ?High

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK170_07

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK1700

Drain Current ??D= 5A@ TC=25C

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1701

Drain Current ??D= 8A@ TC=25C

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1703

Drain Current ??D= 5A@ TC=25C

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1704

Fast Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1705

Fast Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1706

Fast Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1707

Fast Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1708

Fast Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK1709

Fast Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    2SK170

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    TRANSISTOR

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24+
60000
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2011+
TO-92
6000
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80
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更多2SK170供應(yīng)商 更新時(shí)間2024-11-6 9:00:00