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2SK209

Audio Frequency Low Noise Amplifier Applications

AudioFrequencyLowNoiseAmplifierApplications ?High|Yfs|:|Yfs|=15mS(typ.)atVDS=10V,VGS=0 ?Highbreakdownvoltage:VGDS=?50V ?Lownoise:NF=1.0dB(typ.) atVDS=10V,ID=0.5mA,f=1kHz,RG=1k? ?Highinputimpedance:IGSS=?1nA

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK209

Audio Frequency Low Noise Amplifier Applications

AudioFrequencyLowNoiseAmplifierApplications ?High|Yfs|:|Yfs|=15mS(typ.)atVDS=10V,VGS=0 ?Highbreakdownvoltage:VGDS=?50V ?Lownoise:NF=1.0dB(typ.) atVDS=10V,ID=0.5mA,f=1kHz,RG=1k? ?Highinputimpedance:IGSS=?1nA

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK209

Audio Frequency Low Noise Amplifier Applications

AudioFrequencyLowNoiseAmplifierApplications ?High|Yfs|:|Yfs|=15mS(typ.)atVDS=10V,VGS=0 ?Highbreakdownvoltage:VGDS=?50V ?Lownoise:NF=1.0dB(typ.) atVDS=10V,ID=0.5mA,f=1kHz,RG=1k? ?Highinputimpedance:IGSS=?1nA

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK209

N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)

AudioFrequencyLowNoiseAmplifierApplications ?High|Yfs|:|Yfs|=15mS(typ.)atVDS=10V,VGS=0 ?Highbreakdownvoltage:VGDS=?50V ?Lownoise:NF=1.0dB(typ.) atVDS=10V,ID=0.5mA,f=1kHz,RG=1k? ?Highinputimpedance:IGSS=?1nA

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK209

Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK2090

N-Channel MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK2090

MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING The2SK2090isanN-channelverticalMOSFET.Because itcanbedrivenbyavoltageaslowas2.5Vanditisnot necessarytoconsideradrivecurrent,thisFETisidealasan actuatorforlow-currentportablesystemssuchasheadphone stereosand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2091

Impedance Converter Applications???

ImpedanceConverterApplications Features ·SmallIGSS. ·SmallCiss. ·Ultrasmall-sizedpackagepermitting2SK2091-appliedsetstobemadesmallerandslimmer. Applications ·Low-frequencygeneral-purposeamplifierapplications. ·Impedanceconversion. ·Infraredsenso

SANYOSanyo

三洋三洋電機株式會社

2SK2094

Small switching (60V, 2A)

Structure SiliconN-channelMOSFET Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching

ROHMRohm

羅姆羅姆半導體集團

2SK2094

Silicon N-Channel MOSFET

Features Lowon-resistance Fastswitchingspeed Low-voltagedrive Easilydesigneddrivecircuits

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK2095N

Small Switching

Structure SiliconN-channelMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Easilydesigneddrivecircuits. 5)LowVGS(th). 6)Easytoparallel.

ROHMRohm

羅姆羅姆半導體集團

2SK2096

Silicon N Channel MOS FET

Application Highspeedpowerswitching Features ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?4Vgatedrivedevicecanbedrivenfrom5Vsource ?Suitableforswitchingregulator,DC-DCconverter ?Avalancheratings

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2096

Silicon N-Channel MOS FET

?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?4Vgatedrivedevicecanbedrivenfrom5Vsource ?Suitableforswitchingregulator,DC-DCconverter ?Avalancheratings

HitachiHitachi Semiconductor

日立日立公司

2SK2096-E

Silicon N Channel MOS FET

Features ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?Nosecondarybreakdown ?SuitableforSwitchingregulator Application Highspeedpowerswitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2097

Silicon N-Channel MOS FET

Features ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?NoSecondaryBreakdown ?SuitableforSwitchingregulator,DC-DCconverter. Application Highspeedpowerswitching

HitachiHitachi Semiconductor

日立日立公司

2SK2098

N-channel MOS-FET

150V0,08?20A50W >Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance -AvalancheProof >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters

FujiFuji Electric

富士電機富士電機株式會社

2SK2098-01MR

N-channel MOS-FET

150V0,08?20A50W >Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance -AvalancheProof >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters

FujiFuji Electric

富士電機富士電機株式會社

2SK2099-01L

N-channel MOS-FET

250V0,85?6A20W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurpose

FujiFuji Electric

富士電機富士電機株式會社

2SK2099-01S

N-channel MOS-FET

250V0,85?6A20W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurpose

FujiFuji Electric

富士電機富士電機株式會社

2SK209-BL

Audio Frequency Low Noise Amplifier Applications

AudioFrequencyLowNoiseAmplifierApplications ?High|Yfs|:|Yfs|=15mS(typ.)atVDS=10V,VGS=0 ?Highbreakdownvoltage:VGDS=?50V ?Lownoise:NF=1.0dB(typ.) atVDS=10V,ID=0.5mA,f=1kHz,RG=1k? ?Highinputimpedance:IGSS=?1nA

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細參數(shù)

  • 型號:

    2SK209

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
TOSHIBA/東芝
23+
SOT-23
100586
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費!
詢價
TOSHIBA/東芝
24+
SOT23
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
詢價
NEC
2024
SOT-23
13500
16余年資質 絕對原盒原盤代理渠道 更多數(shù)量
詢價
TOSHIBA
24+
57
詢價
TOSHIBA
23+
SOT-23
9526
詢價
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
TOSHIBA
22+23+
SOT23
49819
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
TOSHIBA
SOT-23
2200
庫存剛更新加微13425146986
詢價
TOSHIBA/東芝
20+
SOT23
32970
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
原裝TOSHIBA
2023+
SOT-23
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多2SK209供應商 更新時間2024-11-19 9:35:00