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2SK2508

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK2510

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK2510

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2510isN-ChannelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?SuperLowOn-Resistance RDS(on)1=20mW(VGS=10V,ID=20A) RDS(on)2=30mW(VGS=4V,ID=20A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2511

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK2511

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK2511isN-ChannelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?SuperLowon-stateresistance RDS(on)1=27mΩMAX.(VGS=10V,ID=20A) RDS(on)2=40mΩMAX.(VGS=4V,ID=20A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2512

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK2512

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2512isN-ChannelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?LowOn-Resistance RDS(on)1=15mW(VGS=10V,ID=23A) RDS(on)2=23mW(VGS=4V,ID=23A) ?LowCi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2514

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK2514

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK2514isN-ChannelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?SuperLowon-stateresistance RDS(on)1≤15mΩMAX.(VGS=10V,ID=25A) RDS(on)2≤23mΩMAX.(VGS=4V,ID=25A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2515

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    2SK25

  • 制造商：

    KEXIN

  • 制造商全稱：

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述：

    Silicon N-Channel MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
ROHM/羅姆
24+
TO-252
30240
只做原廠渠道 可追溯貨源
 詢價
ROHM/羅姆
2024
TO-252
505348
16余年資質(zhì) 絕對原盒原盤代理渠道 更多數(shù)量
 詢價
ROHM
24+
TO-252
8700
新進庫存/原裝
 詢價
ROHM
24+
TO252
2230
原裝現(xiàn)貨假一罰十
 詢價
ROHM
01+
SOT252
2900
全新原裝進口自己庫存優(yōu)勢
 詢價
ROHM
23+
D-PAK
12335
詢價
羅姆
23+
TO-252
6000
專業(yè)優(yōu)勢供應(yīng)
 詢價
ROHM
17+
TO263
9988
只做原裝進口,自己庫存
 詢價
KEXIN
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ROHM
19+
TO-252
59526
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
更多2SK25供應(yīng)商 更新時間2025-4-12 9:24:00

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