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2SK3056

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3056

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3056-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3056-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-ZJ

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK3056

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
17+
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6200
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2339+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
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35890
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23+
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15000
專做原裝正品,假一罰百!
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24+
6540
原裝現(xiàn)貨/歡迎來(lái)電咨詢
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NEC
2021+
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100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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NEC
23+
TO-220
10000
公司只做原裝正品
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NEC
22+
TO-220
6000
十年配單,只做原裝
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NEC
TO-220
608900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
NEC
23+
2800
正品原裝貨價(jià)格低
 詢價(jià)
更多2SK3056供應(yīng)商 更新時(shí)間2025-2-6 16:00:00

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