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2SK3062-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3062-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3062-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-S

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3062-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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SOT-263
20000
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23+
SOT-263
4000
正品原裝貨價(jià)格低qq:2987726803
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NEC
24+
TO-263
36800
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NEC
2023+環(huán)?,F(xiàn)貨
TO-263
18000
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NEC
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NEC
23+
TO220
50000
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NEC
23+
TO-220
10000
公司只做原裝正品
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NEC
22+
6000
220
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NEC
23+
TO-TO-220
33500
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NEC
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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更多2SK3062-ZJ供應(yīng)商 更新時(shí)間2025-1-3 16:30:00