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2SK3353

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5m?MAX.(VGS=10V,ID=41A) RDS(on)2=14m?MAX.(VGS=4V,ID=41A) ?LowCiss:Ciss=4650pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3353

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=9.5m?MAX.(VGS=10V,ID=41A) RDS(on)2=14m?MAX.(VGS=4V,ID=41A) ●LowCiss:Ciss=4650pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3353

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3353

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3353-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5m?MAX.(VGS=10V,ID=41A) RDS(on)2=14m?MAX.(VGS=4V,ID=41A) ?LowCiss:Ciss=4650pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3353-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3353-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5m?MAX.(VGS=10V,ID=41A) RDS(on)2=14m?MAX.(VGS=4V,ID=41A) ?LowCiss:Ciss=4650pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3353-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3353-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3353_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    2SK3353

  • 制造商:

    KEXIN

  • 制造商全稱:

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述:

    MOS Field Effect Transistor

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更多2SK3353供應(yīng)商 更新時(shí)間2025-1-29 9:24:00