首頁(yè) >2SK3354(03)-ZP-E1-AY>規(guī)格書列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ?Low | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFieldEffectTransistor Features ●Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=6300pFTYP. ●Built-ingateprotectiondiode | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=12m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6300pFTYP. ?Bu | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=12m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6300pFTYP. ?Bu | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ?Low | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=12m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6300pFTYP. ?Bu | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ?Low | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ?Low | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
23+ |
TO-263 |
35680 |
只做進(jìn)口原裝QQ:373621633 |
詢價(jià) | ||
RENESAS |
21+ |
TO-263 |
1130 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
RENESAS/瑞薩 |
1740+PB |
TO-263 |
650 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
RENESAS/瑞薩 |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
RENESAS/瑞薩 |
2022 |
TO-263 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
RENESAS |
22+ |
TO-263 |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) | ||
RENESAS/瑞薩 |
/ROHS.original |
原封 |
22102 |
電子元件,供應(yīng) -正納電子/ 元器件IC -MOS -MCU. |
詢價(jià) | ||
RENESAS |
1740+ |
TO-263 |
650 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
RENESAS |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
RENESAS/瑞薩 |
23+ |
NA/ |
3900 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) |
