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2SK3355-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3355-ZJ

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3355

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3355

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3355

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=9800pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3355-S

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3355-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3355-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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12300
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更多2SK3355-ZJ供應商 更新時間2025-1-31 16:30:00

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