首頁 >2SK3434(0)-Z-E1>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) ?Lo | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFieldEffectTransistor Features ●Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=10V,ID=24A) RDS(on)2=31m?MAX.(VGS=4V,ID=24A) ●LowCiss:Ciss=2100pFTYP. ●Built-ingateprotectiondiode | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=10V,ID=24A) RDS(on)2=31m?MAX.(VGS=4.0V,ID=24A) ?LowCiss:Ciss=2100pFTYP. ?Built-ing | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=10V,ID=24A) RDS(on)2=31m?MAX.(VGS=4.0V,ID=24A) ?LowCiss:Ciss=2100pFTYP. ?Built-ing | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) ?Lo | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=10V,ID=24A) RDS(on)2=31m?MAX.(VGS=4.0V,ID=24A) ?LowCiss:Ciss=2100pFTYP. ?Built-ing | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) ?Lo | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
22+ |
TO-220 |
38598 |
鄭重承諾只做原裝進口貨 |
詢價 | ||
RENESAS |
2023+ |
TO-263 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
只做原裝 |
24+ |
SO-263 |
36520 |
一級代理/放心采購 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
SO-263 |
25000 |
代理原裝現(xiàn)貨,假一賠十 |
詢價 | ||
RENESAS |
15+PBF |
TO-263 |
1000 |
現(xiàn)貨 |
詢價 | ||
RENESAS |
21+ |
SO-263 |
5330 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
SO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
RENESAS/瑞薩 |
2022 |
SO-263 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
TO-263 |
1000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
RENESAS/瑞薩 |
21+ |
TO-263 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 |
