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2SK3480

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=10V,ID=25A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=25A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3480

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

2SK3480

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3480

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

2SK3480

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)1=31mMAX.(VGS=10V,ID=25A) RDS(on)2=36mMAX.(VGS=4.5V,ID=25A) ●LowCiss:Ciss=3600pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3480

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31m?MAX.(VGS=10V,ID=25A) RDS(on)2=36m?MAX.(VGS=4.5V,ID=25A) ?LowCiss:Ciss=3600pFTYP. ?B

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3480-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=10V,ID=25A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=25A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3480-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3480-S

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31m?MAX.(VGS=10V,ID=25A) RDS(on)2=36m?MAX.(VGS=4.5V,ID=25A) ?LowCiss:Ciss=3600pFTYP. ?B

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3480-Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3480-Z

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31m?MAX.(VGS=10V,ID=25A) RDS(on)2=36m?MAX.(VGS=4.5V,ID=25A) ?LowCiss:Ciss=3600pFTYP. ?B

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3480-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=10V,ID=25A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=25A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3480-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=10V,ID=25A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=25A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3480-ZJ

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3480-ZJ

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31m?MAX.(VGS=10V,ID=25A) RDS(on)2=36m?MAX.(VGS=4.5V,ID=25A) ?LowCiss:Ciss=3600pFTYP. ?B

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
24+
TO-263
1000
只做原廠渠道 可追溯貨源
詢價
RENESAS
2023+
TO-263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
只做原裝
24+
SO-263
36520
一級代理/放心采購
詢價
RENESAS/瑞薩
23+
SO-263
25000
代理原裝現貨,假一賠十
詢價
RENESAS
15+PBF
TO-263
1000
現貨
詢價
RENESAS
21+
SO-263
6438
原裝現貨假一賠十
詢價
RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現貨,支持訂貨
詢價
RENESAS/瑞薩
2022
TO-263
80000
原裝現貨,OEM渠道,歡迎咨詢
詢價
RENESAS/瑞薩
2022+
TO-263
1000
原廠代理 終端免費提供樣品
詢價
RENESAS
22+
SO-263
25000
原裝現貨,價格優(yōu)惠,假一罰十
詢價
更多2SK3480(0)-Z-E1-AZ供應商 更新時間2025-1-8 16:36:00