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2SK3481

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3481

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50m?MAX.(VGS=10V,ID=15A) RDS(on)2=58m?MAX.(VGS=4.5V,ID=15A) ?LowCiss:Ciss=2300pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3481

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3481

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ●LowCiss:Ciss=2300pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3481-S

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50m?MAX.(VGS=10V,ID=15A) RDS(on)2=58m?MAX.(VGS=4.5V,ID=15A) ?LowCiss:Ciss=2300pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3481-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3481-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3481-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3481-Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3481-Z

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50m?MAX.(VGS=10V,ID=15A) RDS(on)2=58m?MAX.(VGS=4.5V,ID=15A) ?LowCiss:Ciss=2300pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3481-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3481-ZJ

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3481-ZJ

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50m?MAX.(VGS=10V,ID=15A) RDS(on)2=58m?MAX.(VGS=4.5V,ID=15A) ?LowCiss:Ciss=2300pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號:

    2SK3481-Z-AZ

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-220 SMD

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RENESAS(瑞薩)/IDT
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7350
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N/A
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RENESAS丨全系列供應(yīng)
23+
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2000
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Renesas
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全新原裝鄙視假貨15118075546
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NEC
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TO-263
8866
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NEC
23+
TO-263
11787
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NEC
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TO-263
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NEC
TO-263
22+
6000
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NEC
22+
TO-263
25000
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更多2SK3481-Z-AZ供應(yīng)商 更新時(shí)間2025-1-3 17:07:00