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2SK3698-01

N-CHANNEL SILICON POWER MOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

2SK3698-01

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=3.7A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3699-01MR

N-CHANNEL SILICON POWER MOSFET

■Features ?Highspeedswitching ?Lowon-resistance ?Nosecondarybreadown ?Lowdrivingpower ?Avalanche-proof ■Applications ?Switchingregulators ?UPS(UninterruptiblePowerSupply) ?DC-DCconverters

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

2SK3699-01MR

N-CHANNEL SILICON POWER MOSFET

FUJIPOWERMOSFETSuperFAP-GSeries Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

2SK3699-01MR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=3.7A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK369-BL

For Low Noise Audio Amplifier Applications

ForLowNoiseAudioAmplifierApplications *SuitableforuseasfirststageforequalizerandMCheadamplifiers. *High|Yfs|:|Yfs|=40mS(typ.)(VDS=10V,VGS=0,IDSS=5mA) *Highbreakdownvoltage:VGDS=?40V(min) *Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK369_07

Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK3690-01

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    2SK369

  • 制造商:

    Fuji Electric

  • 功能描述:

    MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.8 Ohms;ID 4.5A;TO-220AB;PD 80W;VGS +/-30V

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
60000
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TOSHIBA
24+
TO-92
3000
原裝現(xiàn)貨假一罰十
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TOS
23+
20000
正品原裝貨價(jià)格低
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TOSHIBA
11+
3200
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
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FUJI進(jìn)口原
17+
TO220F-3
6200
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富士通
15+
TO-247
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
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富士通
23+
TO-247
3000
全新原裝
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TOS
16+
TO-220
10000
全新原裝現(xiàn)貨
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FUJI
2020+
TO220F
420
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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FUJI
23+
T0220
9516
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更多2SK369供應(yīng)商 更新時(shí)間2025-3-13 16:30:00