2SK370

N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

ForLowNoiseAudioAmplifierApplications ?SuitableforuseasfirststageforequalizerandMCheadamplifiers. ?High|Yfs|:|Yfs|=22ms(typ.)(VDS=10V,VGS=0,IDSS=3mA) ?Highbreakdownvoltage:VGDS=?40V ?Highinputimpedance:IGSS=?1nA(max)(VGS=?30V)

2SK370

MINI PACKAGE SERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

2SK370

Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

2SK3700

Silicon N Channel MOS Type Switching Regulator Applications

SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=2.0?(typ.) ?Highforwardtransferadmittance:|Yfs|=4.5S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) ?Enhancementmodel:Vth=2.0to4.0V(VDS=10V,ID=1mA)

2SK3700

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SK3702

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=55mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

2SK3702

DC / DC Converter Applications

DC/DCConverterApplications Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?4Vdrive.

2SK3702JS

N-Channel Silicon MOSFET General-Purpose Switching Device

General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?4Vdrive. ?Avalancheresistanceguarantee. ?Pb-freetype.

2SK3703

General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features ?ON-resistanceRDS(on)1=20mΩ(typ.) ?4Vdrive ?InputcapacitanceCiss=1780pF(typ.)

2SK3704

General-Purpose Switching Device Applications

N-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?4Vdrive. ?Motordrive,DC/DCConverter.

2SK3704

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=14mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

2SK3705

2SK3705

Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?4Vdrive. ?Motordriver,DC/DCconverter. ?Avalancheresistanceguarantee.

2SK3705

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

2SK3706

General-Purpose Switching Device Applications

N-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?4Vdrive. ?Motordriver,DC/DCconverter. ?Avalancheresistanceguarantee.

2SK3706

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=130mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

2SK3707

General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features ?ON-resistanceRDS(on)1=45mΩ(typ.) ?4Vdrive ?InputcapacitanceCiss=2150pF(typ.)

2SK3707

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

2SK3708

General-Purpose Switching Device Applications

N-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?4Vdrive. ?Motordriver,DC/DCconverter. ?Avalancheresistanceguarantee.

2SK3708

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

2SK3709

General-Purpose Switching Device Applications

N-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?4Vdrive. ?Motordriver,DC/DCconverter. ?Avalancheresistanceguarantee.