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2SK3716

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5m?MAX.(VGS=10V,ID=30A) RDS(on)2=9.1m?MAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=2700pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3716

MOS Field Effect Transistor

MOSFieldEffectTransistor Features Superlowon-stateresistance: RDS(on)1=6.5mùMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mùMAX.(VGS=4.5V,ID=30A) LowCiss:Ciss=2700pFTYP. Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3716

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3716

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=4.5V,ID=30A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3716-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=4.5V,ID=30A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5m?MAX.(VGS=10V,ID=30A) RDS(on)2=9.1m?MAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=2700pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3716_15

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

2SK3716-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=4.5V,ID=30A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3716-Z

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

2SK3716-Z

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5m?MAX.(VGS=10V,ID=30A) RDS(on)2=9.1m?MAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=2700pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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VB
2024
TO-251
13500
16余年資質(zhì) 絕對(duì)原盒原盤代理渠道 更多數(shù)量
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NEC
24+
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8866
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NEC
12+
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15000
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NEC
23+
TO-251
12257
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KEXIN
23+
NA
19960
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Renesas
1822+
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9852
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RENESAS
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41200
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NEC
21+
TO-252
30000
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R
23+
TO-251
10000
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VBSEMI/臺(tái)灣微碧
23+
TO252
50000
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更多2SK3716供應(yīng)商 更新時(shí)間2024-11-7 16:40:00