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2SK3716

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5m?MAX.(VGS=10V,ID=30A) RDS(on)2=9.1m?MAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=2700pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3716

MOS Field Effect Transistor

MOSFieldEffectTransistor Features Superlowon-stateresistance: RDS(on)1=6.5mùMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mùMAX.(VGS=4.5V,ID=30A) LowCiss:Ciss=2700pFTYP. Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3716

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3716

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=4.5V,ID=30A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3716-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=4.5V,ID=30A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5m?MAX.(VGS=10V,ID=30A) RDS(on)2=9.1m?MAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=2700pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3716_15

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

2SK3716-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=4.5V,ID=30A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3716-Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3716-Z

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

2SK3716-Z

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3716isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=6.5m?MAX.(VGS=10V,ID=30A) RDS(on)2=9.1m?MAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=2700pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應商型號品牌批號封裝庫存備注價格
VB
2024
TO-251
13500
16余年資質 絕對原盒原盤代理渠道 更多數量
 詢價
NEC
24+
TO-251
8866
詢價
NEC
12+
TO-251
15000
全新原裝,絕對正品,公司現貨供應。
 詢價
NEC
23+
TO-251
12257
全新原裝
 詢價
KEXIN
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
Renesas
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
RENESAS
18+
TO-252
41200
原裝正品,現貨特價
 詢價
NEC
21+
TO-252
30000
只做正品原裝現貨
 詢價
R
23+
TO-251
10000
公司只做原裝正品
 詢價
VBSEMI/臺灣微碧
23+
TO252
50000
全新原裝正品現貨,支持訂貨
 詢價
更多2SK3716供應商 更新時間2025-1-8 16:39:00

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