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零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
2SK374 | Silicon N-Channel Junction FET SiliconN-ChannelJunctionFET Forlow-frequencyamplification Forswitching ■Features ●Lownoise-figure(NF) ●HighgatetodrainvoltageVGDO ●Mini-typepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking. | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | |
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforhighvoltageapplicationssuchaslampdrive,DC/DCconverter,andactuatordriver. FEATURES ?Gatevoltagerating:±30V ?Lowon-stateresistanc | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS Field Effect Transistor Features Gatevoltagerating:±30V Lowon-stateresistance RDS(on)=160mùMAX.(VGS=10V,ID=10A) Lowgatecharge QG=47nCTYP.(VDD=200V,VGS=10V,ID=20A) Surfacemountpackageavailable | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,designedforhighvoltage applicationssuchaslampdrive,DC/DCconverter,and actuatordriver. FEATURES ?Gatevolta | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforhighvoltageapplicationssuchaslampdrive,DC/DCconverter,andactuatordriver. FEATURES ?Gatevoltagerating:±30V ?Lowon-stateresistanc | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,designedforhighvoltage applicationssuchaslampdrive,DC/DCconverter,and actuatordriver. FEATURES ?Gatevolta | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon N-Channel MOS Type Switching Regulator Applications SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=2.2?(typ.) ?Highforwardtransferadmittance:|Yfs|=3.5S(typ.) ?Lowleakagecurrent:IDSS=100μA(VDS=720V) ?Enhancementmodel:Vth=4.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Silicon N Channel MOS Type Switching Regulator Applications SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.29?(typ.) ?Highforwardtransferadmittance:|Yfs|=5.8S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDSS=450V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
High-Voltage, High-Speed Switching Applications High-Voltage,High-SpeedSwitchingApplications Features ?LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching ?Highreliability(AdoptionofHVPprocess) ?Micalesspackagefacilitatingmounting ?Avalancheresistanceguarantee | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO | ||
N-Channel Power MOSFET Features ?LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching ?Highreliability(AdoptionofHVPprocess) ?Micalesspackagefacilitatingmounting ?Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel Power MOSFET Features ?LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching ?Highreliability(AdoptionofHVPprocess) ?Micalesspackagefacilitatingmounting ?Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
High-Voltage, High-Speed Switching Applications High-Voltage,High-SpeedSwitchingApplications Features ?LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. ?Highreliability(AdoptionofHVPprocess). ?Avalancheresistanceguarantee. | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO | ||
N-Channel Power MOSFET Features ?LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching ?Highreliability(AdoptionofHVPprocess) ?Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel Power MOSFET Features ?LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching ?Highreliability(AdoptionofHVPprocess) ?Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
High-Voltage, High-Speed Switching Applications High-Voltage,High-SpeedSwitchingApplications Features ?LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. ?Highreliability(AdoptionofHVPprocess). ?AttachmentworkabilityisgoodbyMica-lesspackage. ?Avalancheresistanceguarantee. | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO |
詳細(xì)參數(shù)
- 型號(hào):
2SK374
- 制造商:
Renesas Electronics Corporation
- 功能描述:
Transistor,FET,Nch,250V/20A,TO263
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
PANASONIC/松下 |
20+ |
SOT-23 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
PANASONIC/松下 |
24+ |
SOT23 |
7906200 |
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系 |
詢價(jià) | ||
24+ |
60000 |
詢價(jià) | |||||
PANASONIC |
24+ |
原廠封裝 |
6000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) | ||
PANASONIC |
23+ |
SOT-23 |
63000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
PANASONIC/松下 |
22+ |
SOT-23 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
PANASONIC/松下 |
23+ |
SOT-23 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
PANASONIC |
2023+ |
SOT-23 |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
PANASONIC/松下 |
23+ |
SOT-23 |
50000 |
原裝正品 支持實(shí)單 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
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